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Low temperature radiation response of SiGe HBTs

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dc.contributor.authorBakerenkov, A. S.
dc.contributor.authorFelitsyn, V. A.
dc.contributor.authorRodin, A. S.
dc.contributor.authorBursian, Y. D.
dc.contributor.authorPershenkov, V. S.
dc.contributor.authorБакеренков, Александр Сергеевич
dc.contributor.authorРодин, Александр Сергеевич
dc.date.accessioned2024-11-20T09:50:46Z
dc.date.available2024-11-20T09:50:46Z
dc.date.issued2019
dc.description.abstract© Published under licence by IOP Publishing Ltd. Radiation degradation rate of base current in SiGe HBTs was experimentally investigated using X-ray irradiation source with Cu anode at room and low temperatures. The dependences of base and collector current on the emitter-base voltage of the transistors were measured during radiation impact and presented for different total dose levels and irradiation conditions.
dc.identifier.citationLow temperature radiation response of SiGe HBTs / Bakerenkov, A.S. [et al.] // IOP Conference Series: Materials Science and Engineering. - 2019. - 475. - № 1. - 10.1088/1757-899X/475/1/012001
dc.identifier.doi10.1088/1757-899X/475/1/012001
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/475/1/012001
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85062702473&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/16662
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleLow temperature radiation response of SiGe HBTs
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume475
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