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TID Sensor Based on a Bipolar Transistor

dc.contributor.authorBakerenkov, A. S.
dc.contributor.authorPershenkov, V. S.
dc.contributor.authorFelitsyn, V. A.
dc.contributor.authorRodin, A. S.
dc.contributor.authorTelets, V. A.
dc.contributor.authorBelyakov, V. V.
dc.contributor.authorZhukov, A. I.
dc.contributor.authorGlukhov, N. S.
dc.contributor.authorБакеренков, Александр Сергеевич
dc.contributor.authorРодин, Александр Сергеевич
dc.contributor.authorТелец, Виталий Арсеньевич
dc.contributor.authorБеляков, Владимир Васильевич
dc.contributor.authorЖуков, Александр Иванович
dc.date.accessioned2024-11-27T16:23:32Z
dc.date.available2024-11-27T16:23:32Z
dc.date.issued2020
dc.description.abstract© 2020 IEEE.The performance of the total ionizing dose sensor based on a bipolar transistor were researched in this work.
dc.identifier.citationTID Sensor Based on a Bipolar Transistor / Bakerenkov, A.S. [et al.] // IEEE Radiation Effects Data Workshop. - 2020. - 2020-November. - 10.1109/REDW51883.2020.9325848
dc.identifier.doi10.1109/REDW51883.2020.9325848
dc.identifier.urihttps://www.doi.org/10.1109/REDW51883.2020.9325848
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dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/23100
dc.relation.ispartofIEEE Radiation Effects Data Workshop
dc.titleTID Sensor Based on a Bipolar Transistor
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.volume2020-November
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