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Multiple-trapping formalism for the description of charge transport in disordered organic semiconductors with correlated energy disorder

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dc.contributor.authorNikitenko, V. R.
dc.contributor.authorSaunina, A. Yu.
dc.contributor.authorНикитенко, Владимир Роленович
dc.contributor.authorСаунина, Анна Юрьевна
dc.date.accessioned2024-11-21T08:25:29Z
dc.date.available2024-11-21T08:25:29Z
dc.date.issued2019
dc.description.abstract© 2019 Published under licence by IOP Publishing Ltd. An applicability of transport level concept, as well as multiple trapping formalism for the description of charge transport in disordered organics with correlated disorder is supported by analytic modeling of temperature and field dependence of mobility. Results of this modeling are in good agreement with well-known results of Monte-Carlo simulations. The reasons for the description of transport by the multiple trapping model and the respective parameters are discussed.
dc.identifier.citationNikitenko, V. R. Multiple-trapping formalism for the description of charge transport in disordered organic semiconductors with correlated energy disorder / Nikitenko, V.R., Saunina, A.Yu. // IOP Conference Series: Materials Science and Engineering. - 2019. - 498. - № 1. - 10.1088/1757-899X/498/1/012045
dc.identifier.doi10.1088/1757-899X/498/1/012045
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/498/1/012045
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85065568536&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000472784800045
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/17962
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleMultiple-trapping formalism for the description of charge transport in disordered organic semiconductors with correlated energy disorder
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume498
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