Publication:
Low temperature synthesis of graphene nanocomposites using surface passivation of porous silicon nanocrystallites with carbon atoms

dc.contributor.authorTynyshtykbayev, K. B.
dc.contributor.authorAinabаyev, A.
dc.contributor.authorKononenko, O.
dc.contributor.authorChichkov, M.
dc.contributor.authorInsepov, Z.
dc.date.accessioned2024-11-19T12:01:10Z
dc.date.available2024-11-19T12:01:10Z
dc.date.issued2019
dc.description.abstract© 2018 Elsevier B.V. This work presents the experimental investigation of the synthesis of graphene carbon nanocomposites (CNC-G) by carbonization of porous silicon (PS) using CVD method at low temperature of T = 350–500 °C. The low-temperature synthesis of CNC-G is explained by a low melting temperature of porous silicon nanocrystallites (nc-PS) formed during electrochemical etching.
dc.format.extentС. 53-60
dc.identifier.citationLow temperature synthesis of graphene nanocomposites using surface passivation of porous silicon nanocrystallites with carbon atoms / Tynyshtykbayev, K.B. [et al.] // Diamond and Related Materials. - 2019. - 92. - P. 53-60. - 10.1016/j.diamond.2018.12.012
dc.identifier.doi10.1016/j.diamond.2018.12.012
dc.identifier.urihttps://www.doi.org/10.1016/j.diamond.2018.12.012
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85058644955&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000461129800008
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/16407
dc.relation.ispartofDiamond and Related Materials
dc.titleLow temperature synthesis of graphene nanocomposites using surface passivation of porous silicon nanocrystallites with carbon atoms
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume92
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication.latestForDiscovery06e1796d-4f55-4057-8d7e-bb2f3b5676f5
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