Publication:
Effect of Silicate Additive on Structural and Electrical Properties of Germanium Nanowires Formed by Electrochemical Reduction from Aqueous Solutions

Дата
2022
Авторы
Eremina, A. S.
Gavrilin, I. M.
Pokryshkin, N. S.
Kharin, A. Y.
Kharin, A.Y.
Syuy, A. V.
Volkov, V. S.
Yakunin, V. G.
Bubenov, S. S.
Dorofeev, S. G.
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Организационные подразделения
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Организационная единица
Инженерно-физический институт биомедицины
Цель ИФИБ и стратегия развития – это подготовка высококвалифицированных кадров на базе передовых исследований и разработок новых перспективных методов и материалов в области инженерно-физической биомедицины. Занятие лидерских позиций в биомедицинских технологиях XXI века и внедрение их в образовательный процесс, что отвечает решению практикоориентированной задачи мирового уровня – диагностике и терапии на клеточном уровне социально-значимых заболеваний человека.
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Аннотация
Layers of germanium (Ge) nanowires (NWs) on titanium foils were grown by metal-assisted electrochemical reduction of germanium oxide in aqueous electrolytes based on germanium oxide without and with addition of sodium silicate. Structural properties and composition of Ge NWs were studied by means of the scanning and transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. When sodium silicate was added to the electrolyte, Ge NWs consisted of 1–2 at.% of silicon (Si) and exhibited smaller mean diameter and improved crystallinity. Additionally, samples of Ge NW films were prepared by ultrasonic removal of Ge NWs from titanium foils followed with redeposition on corundum substrates with platinum electrodes. The electrical conductivity of Ge NW films was studied at different temperatures from 25 to 300 °C and an effect of the silicon impurity on the thermally activated electrical conductivity was revealed. Furthermore, the electrical conductivity of Ge NW films on corundum substrates exhibited a strong sensor response on the presence of saturated vapors of different liquids (water, acetone, ethanol, and isopropanol) in air and the response was dependent on the presence of Si impurities in the nanowires. The results obtained indicate the possibility of controlling the structure and electrical properties of Ge NWs by introducing silicate additives during their formation, which is of interest for applications in printed electronics and molecular sensorics. © 2022 by the authors.
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Effect of Silicate Additive on Structural and Electrical Properties of Germanium Nanowires Formed by Electrochemical Reduction from Aqueous Solutions / Eremina, A.S. [et al.] // Nanomaterials. - 2022. - 12. - № 16. - 10.3390/nano12162884
URI
https://www.doi.org/10.3390/nano12162884
 https://www.scopus.com/record/display.uri?eid=2-s2.0-85137392183&origin=resultslist
 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000846586600001
 https://openrepository.mephi.ru/handle/123456789/28211
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