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Displacement Damage Effects Mitigation Approach for Heterojunction Bipolar Transistor Frequency Synthesizers

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dc.contributor.authorSotskov, D. I.
dc.contributor.authorElesin, V. V.
dc.contributor.authorKuznetsov, A. G.
dc.contributor.authorZhidkov, N. M.
dc.contributor.authorMetelkin, I. O.
dc.contributor.authorAmburkin, K. M.
dc.contributor.authorAmburkin, D. M.
dc.contributor.authorUsachev, N. A.
dc.contributor.authorBoychenko, D. V.
dc.contributor.authorElesina, V. V.
dc.contributor.authorСотсков, Денис Иванович
dc.contributor.authorЕлесин, Вадим Владимирович
dc.contributor.authorКузнецов, Александр Геннадьевич
dc.contributor.authorЖидков, Никита Михайлович
dc.contributor.authorАмбуркин, Константин Михайлович
dc.contributor.authorАмбуркин, Дмитрий Михайлович
dc.contributor.authorУсачев, Николай Александрович
dc.contributor.authorБойченко, Дмитрий Владимирович
dc.date.accessioned2024-11-27T10:12:44Z
dc.date.available2024-11-27T10:12:44Z
dc.date.issued2020
dc.description.abstract© 1963-2012 IEEE.This work focuses on the design issues of radio frequency (RF) bipolar integrated circuits (ICs) as a part of frequency synthesizers for extreme environmental applications. It is shown that silicon-germanium (SiGe) and gallium arsenide (GaAs) heterojunction bipolar transistors (HBTs) as well as bipolar RF ICs (including frequency dividers, voltage-controlled oscillators, and wide-band amplifiers) are highly sensitive to ambient temperature and radiation-induced displacement damage. This article also presents a design approach based on specialized HBT macromodels and hardening techniques.
dc.format.extentС. 2396-2404
dc.identifier.citationDisplacement Damage Effects Mitigation Approach for Heterojunction Bipolar Transistor Frequency Synthesizers / Sotskov, D.I. [et al.] // IEEE Transactions on Nuclear Science. - 2020. - 67. - № 11. - P. 2396-2404. - 10.1109/TNS.2020.3015560
dc.identifier.doi10.1109/TNS.2020.3015560
dc.identifier.urihttps://www.doi.org/10.1109/TNS.2020.3015560
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85096748495&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000591857900013
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/22627
dc.relation.ispartofIEEE Transactions on Nuclear Science
dc.titleDisplacement Damage Effects Mitigation Approach for Heterojunction Bipolar Transistor Frequency Synthesizers
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue11
oaire.citation.volume67
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