Персона: Бутузов, Владимир Алексеевич
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Владимир Алексеевич
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- ПубликацияТолько метаданныеLSTM-type Neural Network Implementation on a Processor Based on Neuromatrix and RISC Cores for Resource-Limited Applications(2020) Landyshev, S.; Zholondkovskiy, V.; Bocharov, Y.; Butuzov, V.; Бочаров, Юрий Иванович; Бутузов, Владимир Алексеевич© 2020 IEEE.In this paper, we consider the implementation of a recurrent artificial neural network LSTM on the NM6407 digital signal processor (DSP) that is optimized for performing vector and matrix calculations. It contains two NeuroMatrix NMC4 cores, each of which includes RISC processor and vector coprocessor. The architectural features and processor resources are considered, as well as an assessment of its performance in the implementation of the LSTM network to solve a typical classification problem. The implementation of this type of network on the NM6407 tensor core accelerated computations by a factor of 15-350 compared to a scalar processor.
- ПубликацияТолько метаданныеImpact of switches resistance on successive approximation of ADC dynamic performance(2019) Shunkov, V.; Kus, O.; Prokopyev, V.; Bocharov, Y.; Butuzov, V.; Бочаров, Юрий Иванович; Бутузов, Владимир Алексеевич© 2019 Published under licence by IOP Publishing Ltd. This paper discusses the degradation of the dynamic performance in switched capacitors based on successive approximation analog-to-digital converters (SAR ADCs), caused by the resistance of the switch, which connects a voltage reference to a common bus of switched capacitor array. Based on the analysis of the phenomenon, the techniques for reducing its influence are shown. They were used in the design of micro-power SAR ADC, which is presented in the paper.
- ПубликацияТолько метаданныеMicro-transformer-based integrated digital isolator in 180/90 nm CMOS(2019) Kus, O.; Prokopyev, V.; Dmitriev, N.; Smirnov, E.; Butuzov, V.; Nazarenko, A.; Bocharov, Y.; Бутузов, Владимир Алексеевич; Бочаров, Юрий Иванович© 2019 IEEE.An integrated circuit of a digital isolator comprising a transceiver chip implemented in standard 180 nm CMOS process as well as micro-transformers implemented in a special 90 nm technology is presented. The coreless transformer placed on a separate chip has a stacked structure with two adjacent planar copper windings in two layers separated by a silicon dioxide insulator. The transceiver utilizes a pulse edges encoding technique for transmitting signals through the insulation barrier. The proposed digital isolator has a feature in the topology of the elements, which ensures tolerance to the effects of ionizing radiation, as well as the small size of transformers, which makes it possible to create multichannel integrated circuits in small-sized packages. The tested prototype of the digital isolator provided a data transfer rate of more than 30 Mbps. As much as 2.5 kV isolation voltage is achieved between the coils of transformer.
- ПубликацияТолько метаданныеRadiation Hardened Analog-to-Digital Convertor with Automatic Offset Voltage Compensation(2019) Felitsyn, V. A.; Bakerenkov, A. S.; Zhukov, A. I.; Butuzov, V. A.; Bocharov, Y. I.; Pershenkov, V. S.; Rodin, A. S.; Telets, V. A.; Belyakov, V. V.; Бакеренков, Александр Сергеевич; Жуков, Александр Иванович; Бутузов, Владимир Алексеевич; Бочаров, Юрий Иванович; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич© 2019 IEEE.Radiation hardened ADC with automatic offset voltage compensation was developed. TID radiation effect in the ADC was investigated at different temperatures. The designed ADC devices demonstrate high radiation hardness. Up to total dose level 100 krad(Si) any significant radiation induced drift didn't observed in transfer characteristics of all irradiated devices. It is achieved by using techniques such as application of automatic offset voltage compensation circuit together with enclosed layout transistors (ELT), located in ADC control logic. Also, edge-less n-channel MOSFETs with additional guard rings were used to increase the radiation hardness of digital interface and control logic of ADC. In contrast with control logic ELT not used in interface logic. Thus significant degradation of digital interface power supply current was observed unlike control logic power supply. Developed device can be considered as a good technical decision for self-diagnostic systems of electronic devices proposed for application under ionizing radiation impact, especially for systems of spacecrafts and satellites.
- ПубликацияТолько метаданныеMeasuring and Information System for Monitoring Microwave Contamination of Urban Environment(2022) Simakov, A.; Vodokhlebov, I.; Bocharov, Y.; Butuzov, V.; Simakov, M.; Симаков, Андрей Борисович; Водохлебов, Игорь Николаевич; Бочаров, Юрий Иванович; Бутузов, Владимир Алексеевич; Симаков, Михаил Андреевич