Персона:
Лебединский, Юрий Юрьевич

Организационные подразделения

Организационная единица

Институт лазерных и плазменных технологий

Стратегическая цель Института ЛаПлаз – стать ведущей научной школой и ядром развития инноваций по лазерным, плазменным, радиационным и ускорительным технологиям, с уникальными образовательными программами, востребованными на российском и мировом рынке образовательных услуг.

Фамилия

Лебединский

Имя

Юрий Юрьевич

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Теперь показываю 1 - 10 из 25

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Proposal for a nuclear light source
(2023) Tkalya, E. V.; Borisyuk, P. V.; Domashenko, M. S.; Lebedinskii, Y. Y.; Борисюк, Петр Викторович; Лебединский, Юрий Юрьевич
The paper considers a principal possibility of creating a nuclear light source of the vacuum ultra violet (VUV) range based on the 229Th nucleus. This nuclear light source can help to solve two main problems -- excitation of the low-lying 229mTh isomer and precision measurement of the nuclear isomeric transition energy. The Thorium nuclear light source is based on the nuclei implanted in a thin dielectric film with a large bandgap. While passing an electric current through the sample, the 229Th nuclei are excited to the low energy isomeric state 3/2+(8.19±0.12 eV) in the process of inelastic scattering of conduction electrons. The subsequent spontaneous decay of 229mTh is followed by the emission of gamma quanta in the VUV range. The luminosity of the Thorium nuclear light source is approximately photons/s per 1A of current and per 1ng of 229Th. The suggested scheme to obtain gamma radiation from the 229m Th isomer can be considered as a kind of nuclear analogue of the optical radiation from the usual metal-insulator-semiconductor (MIS) junction.
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A Unique System for Registering One-Photon Signals in the Ultraviolet Range from An Isomeric 229mTh Nucleus Implanted on Thin SiO2/Si Films
(2020) Lebedinskii, Y. Y.; Borisyuk, P. V.; Chubunova, E. V.; Kolachevsky, N. N.; Vasiliev, O. S.; Tkalya, E. V.; Лебединский, Юрий Юрьевич; Борисюк, Петр Викторович; Чубунова, Елена Витальевна; Васильев, Олег Станиславович; Ткаля, Евгений Викторович
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimCurrently, an urgent task related to creating a nuclear frequency standard is the identification of a low-lying nuclear state in the thorium-229 isotope. Herein, a method for measuring the single-photon energy during the decay of an isomeric thorium-229 nucleus implanted in a wide-gap dielectric SiO2 (Eg = 9 eV) is developed. The proposed method utilizes thin silicon oxide layers obtained by thermal oxidization of the pure silica wafers, which allows measurement of the energy of photons in the ultraviolet (UV) range using an electronic spectrometer. The modeling study of electronic state excitation is provided via UV radiation from Kr, Xe, and D resonance discharging lamps. The obtained spectra are analyzed, and a method for determining the UV photon's energy is proposed.
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The Electronic and Optical Properties of Thin Nanocluster Mo Films for Single-Photon UV Detectors
(2020) Vasilyev, O. S.; Borisyuk, P. V.; Lebedinskii, Y. Y.; Васильев, Олег Станиславович; Борисюк, Петр Викторович; Лебединский, Юрий Юрьевич
© 2020, Pleiades Publishing, Ltd.Abstract: Results of a study of the electronic structure and optical properties of a novel material based on thin films comprised of Mo nanoclusters obtained by gas-phase magnetron sputtering are presented. The chemical composition of the obtained films immediately after deposition (in situ) and upon exposure to the atmosphere (ex situ) was investigated by X-ray photoelectron spectroscopy. It is shown that exposure to the atmosphere leads to “core–shell” oxidation of the nanoclusters the obtained films are composed of and changes in the valence band. The change in the electronic structure of the obtained films was investigated by spectro-scopy of the characteristic energy losses of electrons. The optical properties of the obtained films were investigated in the wavelength range of 185–800 nm. The possibility of creating thin-film photodetectors based on the obtained Mo nanocluster films for detecting isomeric nuclear transition decay in 229Th nuclei is discussed.
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Local electrochemical deposition of thorium-229 targets and excitation of isomeric state by electron beam
(2020) Borisyuk, P. V.; Vasilyev, O. S.; Lebedinskii, Yu. Yu.; Борисюк, Петр Викторович; Васильев, Олег Станиславович; Лебединский, Юрий Юрьевич
© Published under licence by IOP Publishing Ltd.The results of the study of local formation of thin-film coatings based on thorium oxide on SiO2/Si(111) surfaces by electrochemical deposition. It is shown that as a result of electrochemical deposition of thorium atoms from an acetone solution of Th(NO3)4 with the presence of water on the silicon surface, local formation of thorium compounds occurs. Chemical analysis of the composition of the samples obtained by XPS showed the presence of compounds based on thorium, silicon, oxygen and carbon. It is shown that annealing for 6 hours at 600? C in the atmosphere leads to the departure of carbon, and the formed film consists only of thorium and oxygen. It is shown that such a system can be promising for further studies of the nuclear low-lying isomer transition in the 229Th isotope under electron beam irradiation. The method of excitation of isomeric thorium-229 nuclei by irradiation of a solid-state target based on thorium silicate with an electron beam is considered. The process of generating secondary electrons with a significant increase in the multiplication coefficient for electrons with energies in the range from 1 keV to 25 keV is considered. The values of the output function of isomeric nuclei and the excitation cross section of an isomeric transition in inelastic scattering are obtained on the basis of numerical modeling and theoretical estimation.
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ThSi10O22 Compound as Target for Production of Isomeric Thorium-229 Nuclei at Electron Beam Irradiation
(2020) Borisyuk, P. V.; Chubunova, E. V.; Lebedinskii, Y. Y.; Vasilyev, O. S.; Yakovlev, V. P.; Борисюк, Петр Викторович; Чубунова, Елена Витальевна; Лебединский, Юрий Юрьевич; Васильев, Олег Станиславович; Яковлев, Валерий Петрович
© 2020, Pleiades Publishing, Ltd.Abstract: A method for excitation of thorium-229 isomeric nuclei the electron beam irradiation of a solid-state target based on thorium silicate is considered. The key point for obtaining an effective yield of isomeric nuclei is the generation of secondary electrons with a significant increase in the multiplication factor for electrons that have energies within a range from 1 to 25 keV. Based on numerical simulation and theoretical estimation of the excitation cross section of isomeric transition in inelastic scattering, the yield function of isomeric nuclei was o qualitatively obtained.
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Using Magnetron Sputtering to Deposit Metal Nanoclusters
(2024) Bortko, D. V.; Balakhnev, K. M.; Shilov, V. A.; Borisyuk, P. V.; Vasilyev, O. S.; Lebedinskii, Y. Y.; Бортко, Диана Владимировна; Балахнёв, Кирилл Максимович; Шилов, Владимир Александрович; Борисюк, Петр Викторович; Васильев, Олег Станиславович; Лебединский, Юрий Юрьевич
Ограничено
Влияние квантоворазмерных эффектов наночастиц тантала в тонкопленочных структурах на основе диодов Шоттки на увеличение фотоотклика в ИК диапазоне
(2024) Балахнёв, К. М.; Бортко, Д. В.; Шилов, В. А.; Васильев, О. С.; Борисюк, П. В.; Лебединский, Ю. Ю.; Борисюк, Петр Викторович; Бортко, Диана Владимировна; Лебединский, Юрий Юрьевич; Васильев, Олег Станиславович; Балахнёв, Кирилл Максимович; Шилов, Валентин Александрович
Рассмотрено улучшение чувствительности фотодетекторов Шоттки на основе перехода Ag/n-Si за счет добавления нанокластерного тонкопленочного покрытия Ta. Представлена методика создания таких фотодетекторов, включая изготовление покрытий и оценку их влияния на фотовольтаические характеристики устройств. Исследование показало, что введение слоя нанокластерного покрытия Ta привело к увеличению чувствительности фотодетекторов Шоттки на 29% по сравнению с устройствами без такого покрытия. Данное улучшение обусловлено оптимизацией характеристик барьера Шоттки, что подтверждено анализом отклика исследуемых устройств на тепловое излучение.
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Formation and properties of thin Mo and Mo oxide nanoparticle films
(2020) Borisyuk, P. V.; Vasilyev, O. S.; Lebedinskii, Y. Y.; Bortko, D. V.; Balakhnev, K. M.; Борисюк, Петр Викторович; Васильев, Олег Станиславович; Лебединский, Юрий Юрьевич; Бортко, Диана Владимировна; Балахнёв, Кирилл Максимович
© 2019 Elsevier B.V.The paper presents a study of thin Mo films, consisted of individual nanoparticles of 3.5–5.5 nm in diameter. Their chemical, electron, and optical properties are studied. It is shown that thin films consisting of individual Mo nanoparticles can be formed from the gas phase by magnetron sputtering. Atmospheric exposure leads to the formation of MoOx oxide shell around the metal nuclei of Mo nanoparticles in the films and changes in its electronic structure. Optical properties of the obtained films consisted of ‘core–shell’ Mo@MoOx nanoparticles are investigated. It is shown that the absorption window falls on the range of 190–300 nm, which can be used in the development of single-photon detectors sensitive to weak ultraviolet signals from long-live states, for example from Th-229 low-lying isomeric state.
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Investigation of the Optical Properties of Tantalum Oxide Nanocluster Films in the Infrared Range
(2022) Bortko, D. V.; Borisyuk, P. V.; Shilov, V. A.; Vasilyev, O. S.; Lebedinskii, Yu. Yu.; Balakhnev, K. M.; Бортко, Диана Владимировна; Борисюк, Петр Викторович; Шилов, Владимир Александрович; Васильев, Олег Станиславович; Лебединский, Юрий Юрьевич; Балахнёв, Кирилл Максимович
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Autoelectronic emission and charge relaxation of thorium ions implanted into a thin-film silicon oxide matrix
(2021) Borisyuk, P. V.; Chubunova, E. V.; Kolachevsky, N. N.; Lebedinskii, Y. Y.; Tkalya, E. V.; Vasilyev, O. S.; Yakovlev, V. P.; Борисюк, Петр Викторович; Чубунова, Елена Витальевна; Лебединский, Юрий Юрьевич; Ткаля, Евгений Викторович; Васильев, Олег Станиславович; Яковлев, Валерий Петрович
An ensemble of thorium-229 ions embedded by pulsed laser implantation into a matrix of a broadband dielectric-silicon oxide is studied. The results of the experimental investigation of thorium ions' lifetime as charged components of the Th+/SiO2/Si system formed immediately after laser implantation are presented. The modelled theoretical description takes into account the instantaneous charging of the surface via laser implantation followed by charge relaxation due to the effect of autoelectronic emission that leads to time dependent partial neutralization of the surface charge by tunneling electrons. It was found that the lifetime of Th+ ions on the SiO2 surface can exceed 10 s, which would be an attractive opportunity for studying the nuclear low-lying isomeric transition in the thorium-229 isotope.