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Колодко, Добрыня Вячеславич

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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. ​Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.​
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LEIS ANALYSIS OF THE W SURFACE DURING WATER VAPOR ADSORPTION

2017, Mamedov, N. V., Kurnaev, V. A., Sinelnikov, D. N., Kolodko, D. V., Sorokin, I. A., Мамедов, Никита Вадимович, Колодко, Добрыня Вячеславич, Синельников, Дмитрий Николаевич, Сорокин, Иван Александрович

The adsorption of water on the surface is one of the main problems in vacuum technology. Since water is a good adsorbent, its adsorption is the reason that prevents the fast pumping of vacuum systems up to ultra-high vacuum. In addition, water vapor adsorption on metal surfaces during plasma surface interaction is a problem [1]. Singly scattered and recoil ions could form narrow peaks in energy spectra and provide information about atomic composition of the first atomic layer giving information about structure and composition of the surface and very sensitivity to the first layer of atoms [2 -5]. It was also shown [6] that the thickness of light element thin layers on the heavy substrate can be analyzed with good depth resolution (~0,3nm) due to scattering of hydrogen ions with keV energies. Application of ion scattering spectroscopy at pressures up to several mTorr is presented in [7, 8]. In this work experimental results of low energy ion spectroscopy (LEIS) of W samples during water vapor adsorption are presented.

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Deposition of Metal-Doped Diamond-Like Films Using a Hollow Cathode Discharge

2020, Sorokin, I. A., Kolodko, D. V., Krasnobaev, K. I., Сорокин, Иван Александрович, Колодко, Добрыня Вячеславич

© 2020, Pleiades Publishing, Inc.Abstract—A simple technique is presented for producing diamond-like films with copper impurity by sputtering the surface of a copper cathode with argon ions in a glow discharge with a hollow cathode with simultaneous chemical deposition diamond-like films on its surface. It was shown that a small (up to 1: 1000) admixture of propane at the pressure of the plasma forming gas of 40 Pa does not affect the plasma parameters, however, it allows you to vary the relative copper content in the diamond-like film.

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Direct ion content measurements in a non-sputtering magnetron discharge

2019, Kaziev, A. V., Kolodko, D. V., Ageychenkov, D. G., Tumarkin, A. V., Kharkov, M. M., Stepanova, T. V., Казиев, Андрей Викторович, Колодко, Добрыня Вячеславич, Агейченков, Дмитрий Григорьевич, Тумаркин, Александр Владимирович, Харьков, Максим Михайлович, Степанова, Татьяна Владимировна

In present contribution we report the first direct measurements of ion fluxes in a nonsputtering magnetron discharge (NSMD) with Al cathode in Ar/O-2 mixtures. The diagnostic unit comprising three-electrode electrostatic lens ion extractor, magnetic sector mass-analyzer, and a vacuum electron multiplier was calibrated and then used to record the time-resolved ion counts of Al+ and Ar+ both in NSMD and arc regimes. The results clearly indicate that in NSMD the dominant species are Ar ions while Al ion signal is lower than the sensitivity limit due to noise level, in contrast to the arc discharge. The capabilities of the diagnostics setup and its sensitivity limits are discussed.

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Effects of Ar ion irradiation in an ICP discharge on the titanium surface topology

2020, Chernyh, N. A., Kharkov, M. M., Kaziev, A. V., Danilyuk, D. V., Kukushkina, M. S., Tumarkin, A. V., Kolodko, D. V., Харьков, Максим Михайлович, Казиев, Андрей Викторович, Кукушкина, Маргарита Сергеевна, Тумаркин, Александр Владимирович, Колодко, Добрыня Вячеславич

© 2020 Elsevier B.V.VT1-0 (Russian equivalent of Grade 2) titanium surfaces were modified under argon ion bombardment from the low-pressure inductively coupled plasma (ICP). The ion processing allowed us to prepare various types of structures on titanium with controlled characteristic dimensions at nano- and miscroscale (from tens of nm to 3 µm). The hillock, porous, conical, wall/cell structures as well as their combinations have been obtained. The topology type and the characteristic dimensions of surface features depend on the current density js, Ar ion energy Ei, irradiation fluence Φ (or processing time t), and the sample temperature T during the treatment. The microstructures appear on the surface provided the titanium sample is irradiated at temperatures below 900 °C. The sample temperature was determined by both the average current density (jsav from 0.2 to 20 mA/cm2) and the ion energy (Ei from 150 to 1500 eV). A certain fluence is required for uniform surface coverage with microstructures. We suppose that the titanium surface texturing is a result of a complex interplay of the following mechanisms: sputtering, re-sputtering (shadowing), crystal lattice transformation, accumulation and annihilation of defects, and hypothetically, argon retention.

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Langmuir probe diagnostics of an impulse magnetron discharge with hot Cr target

2019, Tumarkin, A. V., Kaziev, A, V., Leonova, K. A., Kharkov, M. M., Kolodko, D. V., Khomyakov, A. Yu., Тумаркин, Александр Владимирович, Казиев, Андрей Викторович, Харьков, Максим Михайлович, Колодко, Добрыня Вячеславич

Impulse magnetron discharge (pulse duration 20 ms) with uncooled Cr target has been investigated with a specially designed Langmuir probe setup in a wide range of parameters (magnetic field and discharge power). The spatial distributions of electron temperature and plasma density have been measured in the gasless self-sputtering mode. It has been shown that in the gasless high-power pulsed discharge with hot Cr target, plasma density is as high as 5 x 10(18) M-3 at a pulsed power density of 1430 W/cm(2), while the electron temperature drops to values below 1 eV.

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Growth of Thin Graphite Films on a Dielectric Substrate using Heteroepitaxial Synthesis

2020, Sorokin, I. A., Kolodko, D. V., Luzanov, V. A., Shustin, E. G., Сорокин, Иван Александрович, Колодко, Добрыня Вячеславич

A technique for growing thin graphite films on a dielectric substrate by annealing the Al2O3(0001)/Ni(111)/ta-C structure has been optimized. This technique is based on catalytic decomposition of hydrocarbons on the surface of a single-crystal catalyst metal film on a dielectric substrate and subsequent diffusion and crystallization of carbon between the metal film and the substrate. A thin graphite film with a low density of crystal-structure defects is obtained on the dielectric substrate after chemical etching of the metal film.