2017, Mamedov, N. V., Kurnaev, V. A., Sinelnikov, D. N., Kolodko, D. V., Sorokin, I. A., Мамедов, Никита Вадимович, Колодко, Добрыня Вячеславич, Синельников, Дмитрий Николаевич, Сорокин, Иван Александрович

The adsorption of water on the surface is one of the main problems in vacuum technology. Since water is a good adsorbent, its adsorption is the reason that prevents the fast pumping of vacuum systems up to ultra-high vacuum. In addition, water vapor adsorption on metal surfaces during plasma surface interaction is a problem [1]. Singly scattered and recoil ions could form narrow peaks in energy spectra and provide information about atomic composition of the first atomic layer giving information about structure and composition of the surface and very sensitivity to the first layer of atoms [2 -5]. It was also shown [6] that the thickness of light element thin layers on the heavy substrate can be analyzed with good depth resolution (~0,3nm) due to scattering of hydrogen ions with keV energies. Application of ion scattering spectroscopy at pressures up to several mTorr is presented in [7, 8]. In this work experimental results of low energy ion spectroscopy (LEIS) of W samples during water vapor adsorption are presented.

2020, Sorokin, I. A., Kolodko, D. V., Krasnobaev, K. I., Сорокин, Иван Александрович, Колодко, Добрыня Вячеславич

© 2020, Pleiades Publishing, Inc.Abstract—A simple technique is presented for producing diamond-like films with copper impurity by sputtering the surface of a copper cathode with argon ions in a glow discharge with a hollow cathode with simultaneous chemical deposition diamond-like films on its surface. It was shown that a small (up to 1: 1000) admixture of propane at the pressure of the plasma forming gas of 40 Pa does not affect the plasma parameters, however, it allows you to vary the relative copper content in the diamond-like film.

2020, Sorokin, I. A., Kolodko, D. V., Luzanov, V. A., Shustin, E. G., Сорокин, Иван Александрович, Колодко, Добрыня Вячеславич

A technique for growing thin graphite films on a dielectric substrate by annealing the Al2O3(0001)/Ni(111)/ta-C structure has been optimized. This technique is based on catalytic decomposition of hydrocarbons on the surface of a single-crystal catalyst metal film on a dielectric substrate and subsequent diffusion and crystallization of carbon between the metal film and the substrate. A thin graphite film with a low density of crystal-structure defects is obtained on the dielectric substrate after chemical etching of the metal film.