Персона:
Маслов, Михаил Михайлович

Научные группы

Научная группа

Организационные подразделения

Организационная единица

Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

Фамилия

Маслов

Имя

Михаил Михайлович

Полная страница элемента

Результаты поиска

Теперь показываю 1 - 10 из 96

Только метаданные
On ionic transport through pores in a borophene–graphene membrane
(2023) Kochaev, A.; Katin, K.; Maslov, M.; Катин, Константин Петрович; Маслов, Михаил Михайлович
Только метаданные
Unraveling the synergism mechanistic insight of O-vacancy and interfacial charge transfer in WO3-x decorated on Ag2CO3/BiOBr for photocatalysis of water pollutants: Based on experimental and density functional theory (DFT) studies
(2024) Sharma, K.; Sonu.; Sudhaik, A.; Ahamad, T.; Maslov, M. М.; Маслов, Михаил Михайлович
Только метаданные
Kinetic Stability and Reactivity of Silicon and Fluorine-Containing CL-20 Derivatives
(2019) Javan, MasoudB.; Kochaev, AlexeyI.; Soltani, Alireza.; Katin, KonstantinP.; Maslov, MikhailM.; Катин, Константин Петрович; Маслов, Михаил Михайлович
A CL-20 based cages in which carbon/oxygen atoms are replaced by silicon/fluorine ones are studied using the ab initio molecular dynamics, density functional theory, and time-dependent density functional theory. In contrast to the pristine CL-20, the first step of pyrolysis of these cages is the migration of oxygen/fluorine atoms to silicon. Molecules containing fluorine are unstable at room temperature. The high-energy silicon-containing molecule (CSi5H6N12O12) is approximately as stable as pristine CL-20. Energy barrier preventing its decomposition is about 200 kJ/mol. Energies of the frontier orbitals and reactivity descriptors of CSi5H6N12O12 are very close to the corresponding values of pure CL-20. All studied cages can form covalent dimers via the methylene molecular bridges. It is found that the reactions of dimerization are exothermic. Dimers' isomers in which silicon atoms are located closer to the methylene bridges possess lower internal energies. It is found that the mechanisms of dimers' thermal decomposition are similar to the analog mechanisms of corresponding monomers. Dimerization of the cages results in the redshifts of their ultraviolet spectra.
Только метаданные
Applied and computational investigation of plasticizing effects of dibutyl maleate on polymethyl methacrylate acrylic resin material
(2024) Tugut, F.; Bolayır, G.; Gulnahar, E.; Maslov, M. M.; Маслов, Михаил Михайлович
Только метаданные
Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
(2023) Hopoglu, H.; Kaya, D.; Kaya, S.; Maslov, M. M.; Маслов, Михаил Михайлович
Только метаданные
Morse parameters for the interaction of metals with graphene and silicene
(2019) Galashev, A. Y.; Katin, K. P.; Maslov, M. M.; Катин, Константин Петрович; Маслов, Михаил Михайлович
© 2018 Elsevier B.V. We present Morse parameters for the interaction of graphene and silicene surfaces with the atoms of practically important metals Ni, Ag, and Li. The parameters’ values are derived from the dispersion corrected density functional calculations. Two possible cases of sp2-hybridized C/Si atoms in the unbroken graphene/silicene sheets and sp-hybridized atoms near the vacancies are considered. Proposed Morse parameters’ sets reproduce binding energies, bond lengths and oscillation frequencies of metal atoms adsorbed on the hollow positions over the rings of C60 and Si60 fullerenes. They also reproduce well the same quantities for the substituted C59M and Si59M fullerenes (M = Ni, Ag, Li).
Только метаданные
Stabilization of porous borophene-graphene vertical heterostructure using unilateral hydrogenation
(2022) Kochaev, A.; Maslov, M.; Katin, K.; Efimov, V.; Efimova, I.; Маслов, Михаил Михайлович
Unilateral surface passivation by hydrogen atoms is considered as an effective way to stabilize the borophene-graphene with periodic perforation. In the absence of hydrogen, a transition from porous graphene to graphenylene is observed. In the passivation by atomic hydrogen (H-passivated) porous borophene-graphene, the covalent and van der Waals forces are continuing their efforts between boron and carbon layers. The stability is confirmed by ab initio calculations of the cohesive energy and phonon spectrum. Using two calculation schemes, it is shown the semiconductor nature of the electronic properties, mainly due to boron sites. The elastic response is much weaker than that of borophene-graphene, but the out-of-plane piezoelectric effect is stronger. The optical properties are of particular interest mainly due to the absorption peak values in the optical range. © 2022 Elsevier Ltd
Только метаданные
Interlayer Heat Conductivity and Thermal Stability of Distorted Bilayer Graphene
(2021) Podlivaev, A. I.; Grishakov, K. S.; Katin, K. P.; Maslov, M. M.; Подливаев, Алексей Игоревич; Гришаков, Константин Сергеевич; Катин, Константин Петрович; Маслов, Михаил Михайлович
© 2021, Pleiades Publishing, Inc.The nonorthogonal tight-binding potential is augmented by long-range terms needed for a correct description of the interlayer interaction in bilayer graphene. The molecular dynamics method is used to study the heat transfer between two distorted graphene layers, one of which is initially cooled down to 0 K, and the second one is heated up to 77−7000 K. The characteristic time of the heat transfer depending on the initial temperature of the heated layer and the distortion of the layers is determined. It is demonstrated that both factors significantly affect the intensity of interlayer heat transfer. It is found that, during the characteristic time of temperature equalization, thermally induced defects of various types, including melting, separation of the layers, and tangential shear of the heated layer, can appear in the system. It is shown that the formation of thermally induced defects can result in more than an order of magnitude increase in the rate of interlayer heat transfer.
Только метаданные
Moire and non-twisted sp3-hybridized structures based on hexagonal boron nitride bilayers: Ab initio insight into infrared and Raman spectra, bands structures and mechanical properties
(2022) Chernozatonskii, L. A.; Katin, K. P.; Kochaev, A. I.; Maslov, M. M.; Катин, Константин Петрович; Маслов, Михаил Михайлович
We investigated hydrogenated twisted (21.8°) and non-twisted bilayer structures consisting of two hexagonal boron nitride (hBN) monolayers with interlayer covalent bonds. These structures, named bornitranes, are boron nitride analogues of well-known carbon diamanes. We found that the binding energy of twisted structures was about 0.5 eV/BN higher than that of non-twisted AA’- and AB-stacked hBN layers. According to our calculations, the fully hydrogenated Moiré bornitrane with the 21.8° twisted angle has a flattened valence band and an indirect band gap of about 2.8 eV. This value is almost twice wider than that for their non-twisted counterparts. The computed Young's modulus of bornitranes is higher than that for the hBN monolayer. The infrared and Raman spectra of the considered systems were also defined. Spectral fingerprints of the Moiré bornitrane possess many peaks due to the presence of distorted interlayer bonds and are radically different from the spectra of non-twisted systems. Calculated peaks can facilitate experimental detection of the Moiré bornitranes. Investigated structures are novel 2D semiconductors suitable for nanoelectronics and optoelectronics applications. © 2022 Elsevier B.V.
Только метаданные
Tuning the supercritical effective charge in gapless graphene via Fermi velocity modifying through the mechanical stretching
(2019) Katin, K. P.; Krylov, K. S.; Maslov, M. M.; Mur, V. D.; Катин, Константин Петрович; Маслов, Михаил Михайлович
© 2019 Elsevier B.V.We present a theoretical study of the stretched graphene containing the Coulomb impurity. The cases of uniaxial armchair/zigzag and biaxial symmetry stretching are considered. For the uniaxial stretching, we found the gap opening with the non-monotonic dependence between the gap value and the strain. For the biaxial stretching, we observe a monotonic decreasing of Fermi velocity without the gap opening. Non-relativistic ab initio calculations of graphene electronic structure are combined with the analytical solution of relativistic Dirac equation. We found that the sheet stretching could provide a smooth fitting of Fermi velocity and, therefore, the smooth transformation of subcritical Coulomb impurity to the supercritical one.