Персона: Скуратов, Владимир Алексеевич
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Институт ядерной физики и технологий
Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.
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Владимир Алексеевич
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- ПубликацияТолько метаданныеPositron beam studies of radiation damage induced by various energy heavy ions of Xe26+ in iron(2019) Horodek, P.; Kobets, A. G.; Siemek, K.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2019 Polish Academy of Sciences. All rights reserved.Experimental studies of pure iron exposed to Xe26+ irradiation are reported. Implantations were made with the fluence of 5 × 1013 ions/cm2 using 167 MeV ions moderated to 122.5, 77.0, and 44.5 MeV. Investigations were performed with variable energy positron beam (VEP). Doppler broadening spectroscopy (DB) was applied. The analysis of obtained results gives information about the presence of various kind of open-volume defects. Two layers with different values of positron diffusion lengths were found in implanted samples. The deeper one was more defected.
- ПубликацияТолько метаданныеLight-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions(2019) Cherkova, S. G.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2018 Elsevier B.V. Germanium suboxide films and GeO/SiO2 multilayer heterostructures deposited onto Si(001) substrates using evaporation in high vacuum were modified using irradiation of 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. According to Raman spectroscopy data, the swift heavy ion irradiation does not lead to the expected decomposition of germanium suboxide in germanium nanoclusters and GeO2. Infrared absorption spectroscopy measurements show that under irradiation the GeO/SiO2 layers were intermixed with formation of Ge-O-Si bonds. We report strong photoluminescence in the visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. Moreover, a new infrared luminescence band (~0.8 eV) was observed in irradiated structures, which can be related to defects or defects complexes in GexSiyO2 glass.
- ПубликацияТолько метаданныеStability of dry Phage Lambda DNA irradiated with swift heavy ions(2019) Karganov, M. Y.; Alchinova, I. B.; Polyakova, M. V.; Feldman, V. I.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2019Effects of irradiations of Phage Lambda dry DNA samples at room and cryogenic temperatures with 158 MeV Xe and 48 MeV Ar ions were investigated. These ions primary transfer energy into the electronic subsystem of a target: dE/dx = Se, Se Xe = 10.8 keV/nm and Se Ar = 3.5 keV/nm. Site-specific enzymes restriction endonucleases were applied to indicate DNA damages induced by these ions. Electrophoresis was applied to analyze the dependencies of the distributions of DNA fragments sizes on the ion fluence ranging from 108 cm−2 to 1010 cm−2. Electron paramagnetic resonance (EPR)technique was used to investigate damages of a dry DNA sample irradiated at the cryogenic temperature (140 K)with 158 MeV 132 54Xe26+ ions up to the fluence 8.6·109cm−2. A poorly resolved signal centered at the g-factor value for the free electron g ≈ ge was detected, which probably results from a mixture of different-type radicals trapped in the DNA film. The total concentration of paramagnetic species in this sample was estimated to be 1.3 × 1019 spin/g.
- ПубликацияТолько метаданныеLuminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions(2019) Cherkova, S. G.; Volodin, V. A.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2019, Pleiades Publishing, Ltd.Abstract: The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.
- ПубликацияТолько метаданныеThe influence of stopping power and temperature on latent track formation in YAP and YAG(2019) Janse, van, Vuuren, A.; O'Connell, J. H.; Aralbayeva, G.; Dauletbekova, A.; Saifulin, M. M.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2018 Elsevier B.V. Transmission electron microscopy techniques were used to analyse the effect of swift heavy ion irradiation on both yttrium aluminium perovskite (YAP) YAlO3, and yttrium aluminium garnet (YAG) Y3Al5O12 single crystals. The crystals were irradiated with Kr, Xe and Bi ions with energies ranging from 107 to 1030 MeV. These ions have electronic stopping powers in the range from 11 to 41 keV/nm. The ion fluences were all within the non-overlapping regime for latent ion tracks i.e. 1011–1012 cm−2. A number of crystals were also irradiated at different temperatures of 80, 300 and 1000 K at a fixed stopping power. Latent ion tracks with an amorphous core were observed in all samples. The track diameters were seen to increase with increasing stopping power. Track diameters only increase by a significant amount as a result of irradiation temperature at 1000 K, whereas the diameters at 80 and 300 K differ only slightly. Ion tracks in YAG were also found to be larger than those in YAP at comparable stopping powers. It was found that on average 10 keV/nm of extra energy input is required to produce ion tracks in YAP with diameters similar to those in YAG. The results also suggest that the complexity of the crystal structure plays a significant role in the formation of ion tracks in these crystals.
- ПубликацияТолько метаданныеLatent tracks in bulk yttrium-iron garnet crystals irradiated with low and high velocity krypton and xenon ions(2019) O'Connell, J. H.; Janse, van, Vuuren, A.; Kirilkin, N. S.; Zdorovets, M. V.; Saifulin, M. M.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2018 Elsevier B.V. Bulk yttrium-iron garnet (YIG) single crystals have been irradiated with swift Kr and Xe ions having energies from 0.4 to 22.8 MeV/u and electronic stopping powers from 8.9 to 28.9 keV/nm near the irradiated surface. Transmission electron microscopy (TEM) has been used for direct observation of non-overlapping amorphous latent tracks in the near surface region of the irradiated bulk YIG crystals. The amorphous track radii observed in this work have been compared with previously reported data from direct and indirect measurements. It was found that the thickness of the sample subjected to swift heavy ion irradiation does not significantly affect the resulting amorphous track size observed by TEM in YIG. The results also support previously observed consistency between direct TEM and indirect Rutherford backscattering in channelling mode (RBS/C) and Mossbauer spectroscopy (MS) methods for amorphous track evaluation in YIG when electronic stopping power is greater than ∼13 keV/nm, which is sufficient to create cylindrical amorphous tracks by high velocity ions (E > 10 MeV/u). Indirect methods provide underestimated values compared to TEM when the electronic stopping power is below ∼13 keV/nm, for which discrete amorphous tracks are supposed to be formed by high velocity ions.
- ПубликацияТолько метаданныеEffect of the electronic kinetics on graphitization of diamond irradiated with swift heavy ions and fs-laser pulses(2019) Khmelnitski, R. A.; Kononenko, V. V.; O'Connell, J. H.; Syrykh, G. F.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2018 Elsevier B.V. Diamond preliminary damaged with neutrons was irradiated with swift heavy ions (SHI, 1030 MeV 209Bi) decelerated in the electronic stopping regime as well as with fs-laser pulses. The initial excess electronic energy densities appearing in the nanometric vicinity of the SHI trajectories and within the absorbing layers in laser spots were comparable (∼1024 eV cm−3). Graphitization of diamond in the central parts of the lased spots was observed above the threshold fluence of 15–30 J/cm−2. It was also found that the lower threshold fluence is required for initiating graphitization as well as destruction of the pre-damaged crystal by laser pulses in comparison to that for undamaged diamond. This indicates a noticeable effect of an existing defect ensemble on the kinetics of diamond transformations in laser spots. However, X-ray diffraction, atomic-force microscopy, and electron microscopy detected no graphitic domains within the SHI-irradiated pre-damaged crystal. The research demonstrated that the density of the initial excess electronic energy cannot be treated as the sole parameter governing subsequent structure transformations in diamond. Large differences between the spatial as well as temporal scales finally results in different pathways of the relaxation kinetics of this excess energy in laser spots and SHI tracks in diamond.
- ПубликацияТолько метаданныеSwift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures(2019) Kamaev, G. N.; Cherkova, S. G.; Gismatulin, A. A.; Volodin, V. A.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2019 SPIE. In the present study, we experimentally examined the effect of swift Xe ion irradiation of multilayer structures involving ultrathin alternating layers of SiO 2 and amorphous hydrogenated silicon (α-Si:H), and subsequent isochronal anneals of such structures, on their properties. It is shown that the action of swift heavy ions on Si/SiO 2 multilayer structures leads to the formation of Si nanoclusters. In the latter case, the multi-layer structure of the samples was retained, and the ordering of nanoclusters along ion tracks was observed. The irradiation produces nuclei which, during subsequent anneals, facilitate the formation of Si nanocrystals (Si NCs) in the dielectric layer. In the multi-layer metal-oxide-semiconductor (MOS) structures with Si NCs embedded in the dielectric matrix, a phenomenon of bipolar resistive switching was observed. On increasing the number of NC layers, during the on-off process intermediate metastable states were manifested. This observation may prove important for realization of intermediate resistance values (multi-bit data storage) and for the development of additive neuromorphic systems.
- ПубликацияТолько метаданныеRecrystallization as the governing mechanism of ion track formation(2019) Rymzhanov, R. A.; Medvedev, N.; O'Connell, J. H.; vanVuuren, AJanse; Skuratov, V. A.; Скуратов, Владимир АлексеевичResponse of dielectric crystals: MgO, Al2O3 and Y3Al5O12 ( YAG) to irradiation with 167 MeV Xe ions decelerating in the electronic stopping regime is studied. Comprehensive simulations demonstrated that despite similar ion energy losses and the initial excitation kinetics of the electronic systems and lattices, significant differences occur among final structures of ion tracks in these materials, supported by experiments. No ion tracks appeared in MgO, whereas discontinuous distorted crystalline tracks of similar to 2 nm in diameter were observed in Al2O3 and continuous amorphous tracks were detected in YAG. These track structures in Al2O3 and YAG were confirmed by high resolution TEM data. The simulations enabled us to identify recrystallization as the dominant mechanism governing formation of detected tracks in these oxides. We analyzed effects of the viscosity in molten state, lattice structure and difference in the kinetics of metallic and oxygen sublattices at the crystallization surface on damage recovery in tracks.
- ПубликацияТолько метаданныеLuminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions(2019) Cherkova, S. G.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2019 SPIE. The luminescent and structural properties of GeO x thin films and GeO/SiO 2 multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 10 13 cm -2 , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ∼0.8 eV to ∼1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in Ge x Si y O 2 glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO 2 , but causes the intermixing of GeO/SiO 2 layers with the formation of Ge-O-Si bonds.