Персона: Сорокоумов, Георгий Сергеевич
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Георгий Сергеевич
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Теперь показываю 1 - 4 из 4
- ПубликацияТолько метаданныеMechanisms of Initiation of Unstable Latchup Effects in CMOS ICs(2019) Chumakov, A. I.; Bobrovsky, D. V.; Pechenkin, A. A.; Savchenkov, D. V.; Sorokoumov, G. S.; Shvetsov-Shilovskiy, I. I.; Чумаков, Александр Иннокентьевич; Бобровский, Дмитрий Владимирович; Печенкин, Александр Александрович; Сорокоумов, Георгий Сергеевич; Швецов-Шиловский, Иван Иванович© 2019, Pleiades Publishing, Ltd.Abstract: The results of research on nonstationary latchup effects (LEs) under the influence of heavy charged particles and ionizing radiation pulses, which are spontaneously counteracted depending on the operating conditions, are presented. This behavior is caused by the effects of the rail span collapse inside the complementary metal-oxide-system (CMOS) of very large scale integrated (VLSI) circuits. The experimental studies are carried out on both the ion accelerator and the laser facilities.
- ПубликацияТолько метаданныеProton Accelerator's Direct Ionization Single Event Upset Test Procedure(2019) Akhmetov, A. O.; Sorokoumov, G. S.; Smolin, A. A.; Bobrovsky, D. V.; Boychenko, D. V.; Nikiforov, A. Y.; Сорокоумов, Георгий Сергеевич; Бобровский, Дмитрий Владимирович; Бойченко, Дмитрий Владимирович; Никифоров, Александр Юрьевич© 2019 IEEE.The paper presents single event upset (SEU) experimental results in Spartan-6 FPGA due to direct and indirect proton ionization. High energy proton beam and aluminum foils were used to decrease proton energy down to 1.. 20 MeV to observe proton direct ionization upsets.
- ПубликацияТолько метаданныеMeasurement of Parameters of Analog-to-Digital Converters Based on the NI Hardware-Software Complex in the Course of a Radiation Experiment(2021) Torshin, R. S.; Sorokoumov, G. S.; Bobrovsky, D. V.; Titovets, D. O.; Kalashnikova, M. O.; Торшин, Роман Сергеевич; Сорокоумов, Георгий Сергеевич; Бобровский, Дмитрий Владимирович; Титовец, Дмитрий Олегович© 2021 IEEE.The paper presents an automated system for functional and parametric control of analog-to-digital converters (ADC) during a radiation experiment. The automated measuring system is based on the combined use of modular PXI equipment manufactured by National Instruments and the signal generator SMA100B manufactured by Rohde Schwarz (RS). The PXI-4461 module is the most significant module in the system. Hardware and software operations of the measuring system are discussed in the paper. The parameters controlled during total ionizing dose (TID) tests are listed in the paper alongside the algorithm for parametric control. We describe a histogram method for removing input noise. In order to mitigate drawbacks of histogram method, we measured sample median for each ADC code value during the experiment. With the help of this system, the main static and dynamic parameters of test ADCs are calculated and their degradation during irradiation at the Cs-137 isotope source is shown. Specifications for quantifying ADC dynamic performance were based on an FFT results analysis. Typical TID effects in ADCs are observed: degradation of the transfer function and associated deterioration of the accuracy parameters: integral nonlinearity, differential nonlinearity, offset and gain errors.
- ПубликацияТолько метаданныеTotal Ionizing Dose Effects in High-Speed 16-bit Analog-to-Digital Converter(2022) Torshin, R.; Bobrovsky, D.; Ulanova, A.; Sorokoumov, G.; Kalashnikova, M.; Titovets, D.; Торшин, Роман Сергеевич; Бобровский, Дмитрий Владимирович; Уланова, Анастасия Владиславовна; Сорокоумов, Георгий Сергеевич; Титовец, Дмитрий Олегович© 2022 IEEE.The paper presents the research results of Total Ionizing Dose (TID) Effects in high-speed (80 MSPS) analog-to-digital converter (ADC). The article incorporates the description of the equipment for parametric control of the device under test and methodology for measuring ADC characteristics. The article also presents pre-irradiation graphs of integral non-linearity (INL), differential non-linearity (DNL), amplitude spectrum and its degradation during exposure. With regard to findings of the study was determined the most critical operation mode of the Device Under Test (DUT) during irradiation and the most TID sensitive parameter.