Персона:
Васильевский, Иван Сергеевич

Научные группы

Научная группа

Организационные подразделения

Организационная единица

Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

Фамилия

Васильевский

Имя

Иван Сергеевич

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Теперь показываю 1 - 10 из 33

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OPTICAL CHARACTERIZATION OF GETE2 PHASE CHANGE MATERIAL FOR TERAHERTZ APPLICATIONS
(НИЯУ МИФИ, 2023) Konnikova, M.; Khomenko, M.; Tverjanovich, A.; Bereznev, S.; Mankova, A.; Parashchuk, O.; Vasil’evskii, I.; Ozheredov, I.; Shkurinov, A.; Bychkov, E.; Васильевский, Иван Сергеевич
Recently, photonics of phase-exchange materials (PCMs) has become a new research fi eld as the opti-cal properties of PCMs change during the amorphous-crystalline phase transition [1]. Activation of PCMs phase transition is possible by thermal, electrical or optical eff ects on the material [2]. The phase transition principles can be used in terahertz (THz) metamaterials [3], aff ecting their spectral characteristics [4]. By controlling the crystal fraction of the PCM fi lm, multilevel nonvolatile te-rahertz resonance switching states with long retention times can be realized. We investigated the optical, infrared (IR), and THz permittivity properties of thin fi lms of a new PCM GeTe2 during insulator-to-metal transition. Studies of the amorphous and crystalline phases as well as THz spectra are presented and studied using Lorentz and Drude models. It is proposed that the state of GeTe2 can be monitored by observing the intensity characteristics of the 155 cm-1 Raman peak. Molecular dynamics simulations showed that during crystallization, the intensity of the 155 cm-1 mode attributed to Te-Te stretching decreases and disappears during complete crystallization. Using the example of the new GeTe2 PCM, we demonstrate that the properties of PCM-based metasurfaces can be specifi ed at the initial design stage and modifi ed at the experimental stage. It has been shown that this PCM characteristic is of particular interest for achieving dynamic and tunable metasurface functionality. This work was supported in part by the Ministry of Science and Higher Education of the Russian Federation (Grant No. 075-15-2021-1353) for the PCM material characterization; in part by the Interdisciplinary Scientifi c and Educational School of Lomonosov Moscow State University “Photonic and Quantum Technologies: Digital Medicine” for the sensor creation; in part by the European Union through the European Regional Development Fund project “Center of Excellence” TK141 for the thin fi lm preparation; and in part by the Ministry of Science and Higher Education within the State assignment FSRC “Crystallography and Photonics” RAS for the developements and prospects of THz photonics. The experimental Raman spectra were obtained at Lomonosov Moscow State University using the equipment purchased within the Lomonosov Moscow State University Program of Development.
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THZ QUANTUM CASCADE LASERS WITH TWO-PHOTON DESIGN
(НИЯУ МИФИ, 2023) Khabibullin, R. A.; Pushkarev, S. S.; Galie, R. R.; Ponomarev, D. S.; Vasil’evskii, I. S.; Vinichenko, A. N.; Klochkov, A. N.; Bagaev, T. A.; Ladugin, M. A.; Marmalyuk, A. A.; Maremyanin, K. V.; Gavrilenko, V. I.; Ushakov, D. V.; Afonenko, A. A.; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич; Васильевский, Иван Сергеевич
The possibility of implementing two radiation transitions in the gain module for THz QCL has been shown many times [1,2]. However, the activation of these transitions is achieved at diff erent bias points, which corresponds to the optimal alignment of energy levels for each transition. We propose to add an additional step to the ladder of energy levels in the gain module, equal to the energy of THz photon. Due to the low energy of THz photon, it becomes possible to design the gain module based on the conventional GaAs/Al0.15Ga0.85As heterojunction with two-photon emission at one bias point.
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Terahertz photoconductive antenna with embedded electrodes: Simulation and experiment
(2020) Khartaeva, E.; Nomoev, S.; Vasilevskii, I.; Klochkov, A.; Vinichenko, A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич
© Published under licence by IOP Publishing Ltd.The paper presents the results of numerical simulation of a terahertz (THz) photoconductive antenna with embedded electrodes by the finite element method. The simulation results indicate the fact that the proposed THz antenna has a higher photocurrent than the conventional photoconductive antenna with conventional electrode contacts. Higher THz power can potentially be obtained using the proposed photoconductive antenna with embedded electrodes. The simulation results show that the electric field strength at the surface is higher for conventional PCA, however, the PCA depth with embedded contacts has a higher electric field strength. The simulation results show that the increase in the photocurrent is directly proportional to the thickness of the embedded contacts. The results of the performed experiments are consistent with the conclusions of the simulation.
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Adhesive and barrier sublayers for metal nanofilms active elements of hall sensors
(2020) Bolshakova, I. A.; Kost, Y. Y.; Radishevskyi, M. I.; Shurygin, F. M.; Vasil'evskii, I. S.; Васильевский, Иван Сергеевич
© Springer Nature Singapore Pte Ltd. 2020.It was investigated the thermal stability of two types of Hall sensors based on gold nanofilms deposited on sapphire: (i) with the titanium adhesive sublayer (Ti/Au) and (ii) with the titanium adhesive sublayer and the platinum barrier sublayer of (Ti/Pt/Au). Vacuum annealing for 3 h at 400 °C significantly changes all investigated electrophysical parameters of samples with the Ti/Au metallization, which is explained by the titanium diffusion into gold. At the same time, the sensitivity and the resistivity of sensors with the Ti/Pt/Au metallization remain unchanged within a few percent, allowing them to be used in the plasma’s magnetic diagnostic systems of the ITER and DEMO fusion reactors where operating temperatures will exceed 300 °C.
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A visible light scattering study of silicon nanoparticles created in various ways
(2020) Adam, P. M.; Bardakhanov, S.; Movsesyan, A.; Khartaeva, E.; Nomoev, S.; Vasilevskii, I.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич
© 2020 Author(s).The experiments showed the strong dependence of forward and backward scattering of light in the visible region of the spectrum by silicon nanoparticles on the method of their preparation. Silicon nanoparticles are created in two ways: by laser ablation and by the action of a relativistic electron beam. The backscattering spectra from the obtained silicon nanoparticles were measured. Raman light scattering is much more intense for silicon nanoparticles obtained by an electron beam as compared to those created by laser radiation and from single-crystal silicon. These properties of silicon nanoparticles should be taken into account when creating nanoantennas, metamaterials, and other nanophotonic devices with low dissipative losses and reflection.
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THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures
(2020) Klochkov, A. N.; Klimov, E. A.; Solyankin, P. M.; Konnikova, M. R.; Vasil'evskii, I. S.; Vinichenko, A. N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич
© 2020, Pleiades Publishing, Ltd.Abstract: A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on (111)A-oriented substrates is proposed for fabrication of THz photoconductive antennas. These structures contain active LT-GaAs layers and doping acceptor GaAs:Si-based layers. At the optical pump power of 19 mW and the bias voltage of 30 V, a photoconductive antenna based on the optimized {LT-GaAs/GaAs:Si} (111)A structure emits THz pulses with the average power of 2.3 μW at the pulse repetition frequency of 80 MHz; the conversion efficiency is 1.2 × 10–4. It is shown that the dependence of the integral power of THz pulses of the antenna based on the {LT-GaAs/GaAs:Si} (111)A structure on the applied voltage is superlinear; the dependence of this parameter on the optical pump power is plotted as a curve with saturation. It is shown that the designed antennas have a practical application in THz spectroscopy of biological solutions.
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The research for approaches to increase power of the compact thz emitters based on low-temperature gallium arsenide heterostructures
(2020) Nomoev, S.; Vasilevskii, I.; Vinichenko, A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич
© 2020 Trans Tech Publications Ltd, SwitzerlandThe design and technological conditions for the manufacture of photoconductive antennas based on low-temperature gallium arsenide (LT-GaAs) have been developed. The optimized photoconductive THz antenna is made based on LT-GaAs with the flag geometry of the contacts and with the interdigitated structure including metal closing through the dielectric of each second period. LT-GaAs samples were obtained by molecular beam epitaxy at temperatures of 210 ̊C, 230 ̊C, 240 ̊C on GaAs substrates (100). Dark and photocurrent were measured depending on the bias voltage of the LT-GaAs heterostructure at the EP6 probe station. Full wave finite element method solver has been used to investigate the proposed plasmon PCA electrical and optical behavior by combining the Maxwell's wave equation with the drift-diffusion/Poisson equations.
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Pulsed laser modification of layered B-C and mixed BCx films on sapphire substrate
(2021) Zinin, P. V.; Krasnoborodko, S. Y.; Vysokikh, Y. E.; Filonenko, V. P.; Fominski, V. Y.; Romanov, R. I.; Vasil'evskii, I. S.; Safonov, D. A.; Soloviev, A. A.; Ivanov, A. A.; Фоминский, Вячеслав Юрьевич; Романов, Роман Иванович; Васильевский, Иван Сергеевич; Сафонов, Данил Андреевич; Соловьев, Алексей; Иванов, Андрей Анатольевич
© 2021 Elsevier B.V.The effect of pulsed laser annealing (PLA, i.e., action of nanosecond laser pulses in air atmosphere) on surface morphology, structure, chemical state, and electrical properties of thin films consisting of boron and carbon atoms was studied. The nanolayered В/С and mixed ВСx~3 thin film precursors (with a thickness ~110–140 nm) were created on sapphire substrates by using the pulsed laser deposition. Scanning electron microscopy and Raman scattering measurements indicate that the process of stratification of the multilayer B/C films dominated during PLA of the films. The outer layers were removed, and closer to the substrate, the B and C layers were preserved, and they were not mixed. For the mixed ВСх films deposited at elevated temperatures, the PLA treatment enhances ordering of initially amorphous film structure. At the stage of melting of these films, oxygen (from surrounded air) penetrated inside the top layer of the film leading to the formation of a multiphase structure from g-BCx and B-doped GO/rGO after solidification. Studies of the chemical state of elements in the irradiated film have shown that О atoms, which penetrated the under-surface layers of the film, facilitated the formation of new chemical bonds in the B–C–O system. The concentration of O atoms in the depth of the film could reach 8%. The preferential oxidation of boron in a homogeneous mixture of B–C–O atoms indicated that intercalation of carbon matrix could be due to the incorporation of not only O atoms, but also B–O molecules. The laser irradiated ВСх films have a relatively low resistivity (~1.6 mΩ·cm) and semi-metallic dependence on temperature in the range 4.2–300 К. The spatial distribution of conductivity zones after PLA has an irregular structure, and its pattern looks like sand dunes, indicating that the PLA treatment leads to mixing zones of high with those of lower conductivity. The contact-tip resistivity inside the areas of high conductivity of the ВСx/Al2O3 samples may be significantly lower than that of pure graphite.
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Parametrization of a Microwave and the Noise Model of a Metamorphic 0.15 µm MHET InAlAs/InGaAs Transistor
(2021) Gorelov, A. A.; Lokotko, V. V.; Kargin, N. I.; Vasilievsky, I. S.; Grishakov, K. S.; Ryzhuk, R. V.; Горелов, Андрей Алексеевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич; Гришаков, Константин Сергеевич; Рыжук, Роман Валериевич
© 2021, Pleiades Publishing, Ltd.Abstract: AlGaAs MHEMT transistors are studied in the microwave frequency range with a gate length of 0.15 μm. It is found that the discrepancy between the experimental and theoretically calculated, within the model, S-parameters does not exceed 0.5% in the frequency range from 1 to 30 GHz. The static characteristics of the device are satisfactorily described by the indicated model in the voltage range of the runoff up to 2.5 V. For the analysis of the noise characteristics, the Fukui model is used. It is found that the influence of the parasitic drain capacitance and the values of the drain and source inductances do not significantly affect the noise characteristics of the transistor, and an increase in the parasitic capacitance and a decrease in the parasitic gate inductance can lead to a significant reduction in the high-frequency noise figure.
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Plasmon-exciton interaction strongly increases the efficiency of a quantum dot-based near-infrared photodetector operating in the two-photon absorption mode under normal conditions
(2021) Krivenkov, V.; Samokhvalov, P.; Vasil'evskii, I. S.; Kargin, N. I.; Nabiev, I.; Самохвалов, Павел Сергеевич; Васильевский, Иван Сергеевич; Каргин, Николай Иванович; Набиев, Игорь Руфаилович
Semiconductor quantum dots (QDs) are known for their high two-photon absorption (TPA) capacity. This allows them to efficiently absorb infrared photons with energies lower than the bandgap energy. Moreover, TPA in QDs can be further enhanced by the interaction of excitons of the QDs with plasmons of a metal nanoparticle. We fabricated nonlinear plasmon-exciton photodetectors based on QDs and silver nanoplates (SNPs) to demonstrate the optoelectronic application of these effects. A thin layer of CdSe QDs was used as a source of charge carriers for a photoresistor-type photodetector. SNPs with near-infrared plasmon modes were introduced into the layer of QDs to increase the light absorption efficiency. Under near-infrared irradiation, the power of the dependence of the photocurrent on the excitation intensity was twice the power of the corresponding dependence under one-photon excitation with visible light. This proved that the new photodetector efficiently operated under two-photon excitation. Although the SNP light absorption was linear, energy was transferred from plasmons to excitons in the two-quantum mode, which led to a nonlinear dependence. Moreover, we found that the photocurrent from the designed photodetector containing the QD-SNP composite was an order of magnitude higher than that from a photodetector containing QDs alone. This can be explained by the plasmon-induced increase in the TPA efficiency.