Персона: Никитенко, Владимир Роленович
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Extremely Non-Equilibrium Hopping Transport and Photogeneration Efficiency in Organic Semiconductors: An Analytic Approach
An analytical model of highly nonequilibrium hopping transport of charge carriers in disordered organic semiconductors has been developed. In particular, the initial time interval is considered when transport is controlled by hops down in energy. The model is applied to the calculation of the separation probability of geminate pairs in a semiconductor with a Gaussian energy distribution of localized states. This probability determines the photogeneration efficiency. The temperature dependence of the separation probability is obtained and shown to be much weaker than predicted by the classical Onsager model, in agreement with experiment and Monte Carlo simulations. The field dependence is taken into account using a modified effective temperature method.
Disorder and Photogeneration Efficiency in Organic Semiconductors
"An analytical description of the separation probability of a geminate pair in organic semiconductors is given. The initial diffusion of ""hot"" twins is anomalously strong due to energy disorder. This circumstance significantly increases the photogeneration quantum yield at low temperatures and weakens its temperature dependence relative to predictions of the Onsager model, in agreement with Monte Carlo and experimental results."
On Analytical Modeling of Hopping Transport of Charge Carriers and Excitations in Materials with Correlated Disorder
Spatial-energy correlations strongly influence charge and exciton transport in weakly ordered media such as organic semiconductors and nanoparticle assemblies. Focusing on cases with shorter-range interparticle interactions, we develop a unified analytic approach that allows us to calculate the temperature and field dependence of charge carrier mobility in organic quadrupole glasses and the temperature dependence of the diffusion coefficient of excitons in quantum dot solids. We obtain analytic expressions for the energy distribution of hopping centers, the characteristic escape time of charge/exciton from the energy well stemming from energy correlations around deep states, and the size of the well. The derived formulas are tested with Monte Carlo simulation results, showing good agreement and providing simple analytic expressions for analysis of charge and exciton mobility in a broad range of partially ordered media.