2019, Kochaev, A. I., Salem, M. A., Gimaldinova, M. A., Katin, K. P., Ryzhuk, R. V., Kargin, N. I., Maslov, M. M., Гимальдинова, Маргарита Александровна, Катин, Константин Петрович, Рыжук, Роман Валериевич, Каргин, Николай Иванович, Маслов, Михаил Михайлович

We present ab initio study of structures and properties of silaprismanes Si2nH2n and their nitro derivatives Si2nH2n-1NO2 (n = 3-10). We found that silaprismane Si10H9NO2 possesses the highest stability among all studied cages. Attached NO2 group results in weak decreasing of the HOMO-LUMO gap. The smaller prismanes bind with NO2 groups more strongly. The comparison between silaprismanes and carbon prismanes is also discussed.

2023, Tsunvaza, D., Ryzhuk, R. V., Vasil'evskii, I. S., Kargin, N. I., Klokov, V. A., Цунваза, Дамир, Рыжук, Роман Валериевич, Васильевский, Иван Сергеевич, Каргин, Николай Иванович, Клоков, Владимир Александрович

2024, Gusev, A. S., Sultanov, A. O., Ryzhuk, R. V., Nevolina, T. N., Tsunvaza, D., Safaraliev, G. K., Kargin, N. I., Гусев, Александр Сергеевич, Султанов, Азрет Оюсович, Рыжук, Роман Валериевич, Неволина, Татьяна Николаевна, Цунваза, Дамир, Сафаралиев, Гаджимет Керимович, Каргин, Николай Иванович

2019, Shostachenko, S. A., Zakharchenko, R. V., Ryzhuk, R. V., Leshchev, S. V., Захарченко, Роман Викторович, Рыжук, Роман Валериевич, Лещев, Сергей Валерьевич

© 2019 Published under licence by IOP Publishing Ltd. Tantalum nitride thin films were deposited on Al2O3 substrates by the dc-magnetron sputtering technique. The nitrogen content in the argon/nitrogen flow varied from 5 to 50%. Structural properties were studied using X-ray diffraction. The ratio of Ar:N2 was 4:1; the ratio of Ta:N became 1:1. Sheet resistance depends on thickness and is in the range of 20 - 80 Ω/□ due to thickness 100 - 50 nm. The TaN films deposited at a nitrogen/argon ratio of 20% show the thermal stability of the resistance in the 25-400°C temperature range. Sheet resistance degradation was ∼ 5%. The TCR value was determined in the range of 25 - 300 C and was equal to - 21 ppm/K.

2025, Burkitbaev, D., Kulagin, V. V., Ryzhuk, R. V., Valuev, V. V., Рыжук, Роман Валериевич, Валуев, Виктор Васильевич

2021, Gorelov, A. A., Lokotko, V. V., Kargin, N. I., Vasilievsky, I. S., Grishakov, K. S., Ryzhuk, R. V., Горелов, Андрей Алексеевич, Каргин, Николай Иванович, Васильевский, Иван Сергеевич, Гришаков, Константин Сергеевич, Рыжук, Роман Валериевич

© 2021, Pleiades Publishing, Ltd.Abstract: AlGaAs MHEMT transistors are studied in the microwave frequency range with a gate length of 0.15 μm. It is found that the discrepancy between the experimental and theoretically calculated, within the model, S-parameters does not exceed 0.5% in the frequency range from 1 to 30 GHz. The static characteristics of the device are satisfactorily described by the indicated model in the voltage range of the runoff up to 2.5 V. For the analysis of the noise characteristics, the Fukui model is used. It is found that the influence of the parasitic drain capacitance and the values of the drain and source inductances do not significantly affect the noise characteristics of the transistor, and an increase in the parasitic capacitance and a decrease in the parasitic gate inductance can lead to a significant reduction in the high-frequency noise figure.

2024, Gusev, A. S., Sultanov, A. O., Katkov, A. V., Ryndya, S. M., Siglovaya, N. V., Klochkov, A. N., Ryzhuk, R. V., Kargin, N. I., Borisenko, D. P., Гусев, Александр Сергеевич, Султанов, Азрет Оюсович, Катков, Андрей Викторович, Рындя, Сергей Михайлович, Сигловая, Наталия Владимировна, Клочков, Алексей Николаевич, Рыжук, Роман Валериевич, Каргин, Николай Иванович, Борисенко, Денис Петрович