Персона: Номоев, Сергей Андреевич
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Сергей Андреевич
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Теперь показываю 1 - 10 из 10
- ПубликацияТолько метаданныеTerahertz photoconductive antenna with embedded electrodes: Simulation and experiment(2020) Khartaeva, E.; Nomoev, S.; Vasilevskii, I.; Klochkov, A.; Vinichenko, A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич© Published under licence by IOP Publishing Ltd.The paper presents the results of numerical simulation of a terahertz (THz) photoconductive antenna with embedded electrodes by the finite element method. The simulation results indicate the fact that the proposed THz antenna has a higher photocurrent than the conventional photoconductive antenna with conventional electrode contacts. Higher THz power can potentially be obtained using the proposed photoconductive antenna with embedded electrodes. The simulation results show that the electric field strength at the surface is higher for conventional PCA, however, the PCA depth with embedded contacts has a higher electric field strength. The simulation results show that the increase in the photocurrent is directly proportional to the thickness of the embedded contacts. The results of the performed experiments are consistent with the conclusions of the simulation.
- ПубликацияТолько метаданныеPlasmonic-Metal Nanostructures-Enhanced Photoconductive Terahertz Emission and Detection(2024) Nomoev, S.; Vasilevskii, I.; Klochkov, A.; Vinichenko, A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич
- ПубликацияТолько метаданныеComputational modeling of THz photoconductive antenna with plasmonic gold nanorod(2023) Nomoev, S.; Vasilevskii, I.; Khartaeva, E.; Номоев, Сергей Андреевич; Васильевский, Иван СергеевичViews Icon Views Article contents Figures and tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Sergey Nomoev, Ivan Vasilevskii, Erzhena Khartaeva; Computational modeling of THz photoconductive antenna with plasmonic gold nanorod. AIP Conference Proceedings 16 February 2023; 2504 (1): 030041. https://doi.org/10.1063/5.0132407 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioAIP Conference Proceedings Search Advanced Search |Citation Search
- ПубликацияТолько метаданныеВлияние режима отжига материала на свойства терагерцовой фотопроводящей антенны на основе LT-GaAs(2017) Номоев, С. А.; Номоев, Сергей Андреевич; Васильевский И.С.
- ПубликацияТолько метаданныеAn advanced approach to control the electro-optical properties of LT-GaAs-based terahertz photoconductive antenna(2020) Buryakov, A. M.; Ivanov, M. S.; Khusyainov, D. I.; Mishina, E. D.; Nomoev, S. A.; Vasil'evskii, I. S.; Vinichenko, A. N.; Kozlovskii, K. I.; Chistyakov, A. A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич; Козловский, Константин Иванович; Чистяков, Александр Александрович© 2019 Elsevier LtdThis work reports on an advanced approach to the design of THz photoconductive. antenna (PCA). The LT-GaAs thin films used for the PCA fabrication were synthesized by MBE method on GaAs (100) substrate by adjusting the As pressure, As/Ga fluxes ratio, growth/annealing temperatures and annealing time. These parameters crucially affect electro-optical properties of the PCA samples as evidenced by the THz radiation power and time-domain spectroscopy measurements. The annealing temperature of 670 °C was found to be optimal for constructing a PCA possessing high amplitude of the THz radiation over the spectral range up to 1 THz at the resonance of 0.1 THz. The comparison of this PCA with the reference ZnTe crystal reveals a 2-fold increase in THz power. Furthermore, this antenna attains a 1.5-, 3-, and 2-fold increase in THz power, photocurrent efficiency, and actuating dc BV, as compared with the commercial ZOMEGA antenna. These results pave the way towards the creation of highly efficient LT-GaAs-based PCAs.
- ПубликацияТолько метаданныеThe research for approaches to increase power of the compact thz emitters based on low-temperature gallium arsenide heterostructures(2020) Nomoev, S.; Vasilevskii, I.; Vinichenko, A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич© 2020 Trans Tech Publications Ltd, SwitzerlandThe design and technological conditions for the manufacture of photoconductive antennas based on low-temperature gallium arsenide (LT-GaAs) have been developed. The optimized photoconductive THz antenna is made based on LT-GaAs with the flag geometry of the contacts and with the interdigitated structure including metal closing through the dielectric of each second period. LT-GaAs samples were obtained by molecular beam epitaxy at temperatures of 210 ̊C, 230 ̊C, 240 ̊C on GaAs substrates (100). Dark and photocurrent were measured depending on the bias voltage of the LT-GaAs heterostructure at the EP6 probe station. Full wave finite element method solver has been used to investigate the proposed plasmon PCA electrical and optical behavior by combining the Maxwell's wave equation with the drift-diffusion/Poisson equations.
- ПубликацияТолько метаданныеA visible light scattering study of silicon nanoparticles created in various ways(2020) Adam, P. M.; Bardakhanov, S.; Movsesyan, A.; Khartaeva, E.; Nomoev, S.; Vasilevskii, I.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич© 2020 Author(s).The experiments showed the strong dependence of forward and backward scattering of light in the visible region of the spectrum by silicon nanoparticles on the method of their preparation. Silicon nanoparticles are created in two ways: by laser ablation and by the action of a relativistic electron beam. The backscattering spectra from the obtained silicon nanoparticles were measured. Raman light scattering is much more intense for silicon nanoparticles obtained by an electron beam as compared to those created by laser radiation and from single-crystal silicon. These properties of silicon nanoparticles should be taken into account when creating nanoantennas, metamaterials, and other nanophotonic devices with low dissipative losses and reflection.
- ПубликацияОткрытый доступРазработка методов увеличения мощности малогабаритных ТГЦ излучателей на основе выращенных при низкой температуре гетероструктур А3-As(НИЯУ МИФИ, 2023) Номоев, С. А.; Номоев, Сергей Андреевич; Васильевский, И. С.
- ПубликацияТолько метаданныеInvestigation of the Spatial Distribution of Excess Arsenic in an LT-GaAs Layer by Rocking Curve Imaging(2025) Akkuratov, V. I.; Nomoev, S. A.; Номоев, Сергей Андреевич
- ПубликацияТолько метаданныеDesign, Fabrication, and Characterization of Silicon Mach–Zehnder Interferometers with Varying Path Lengths(2025) Nomoev, S. A.; Номоев, Сергей Андреевич