(НИЯУ МИФИ, 2023) Galiev, G.; Klimov, E.; Pushkarev, S.; Yuzeeva, N.; Klochkov, A.; Solyankin, P.; Shkurinov, A.; Клочков, Алексей Николаевич
The planar photoconductive dipole antennas (PCAs) with 20 μm gap were fabricated by photolithography on the following photoconductive materials: GaAs:Si layer 0.86 μm thick grown by molecular beam epitaxy on GaAs (111)A substrate at 380 °C (sample # 1000), i-GaAs layer 1.01 μm thick grown on GaAs (100) and (111)A substrates at 240 °C (LTG-GaAs, samples # 27V). Samples 27V were annealed at a temperature of 560 °C for 30’ in an As4 fl ow, sample 1000 wasn’t annealed.