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Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy

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dc.contributor.authorLadugin, M. A.
dc.contributor.authorAndreev, A. Yu.
dc.contributor.authorYarotskaya, I. V.
dc.contributor.authorRyaboshtan, Yu. L.
dc.contributor.authorMarmalyuk, A. A.
dc.contributor.authorМармалюк, Александр Анатольевич
dc.date.accessioned2024-11-21T09:19:44Z
dc.date.available2024-11-21T09:19:44Z
dc.date.issued2019
dc.description.abstractThis paper presents results of a comparative experimental study aimed at producing GaAs/GaInP and GaAs/AlGaAs quantum wells (QWs) by metalorganic vapor phase epitaxy. The photoluminescence signal of the GaAs/GaInP QWs is shown to have a higher intensity (by a factor of 50-100) and, at the same time, a larger width (by a factor of similar to 2.5) in comparison with the GaAs/AlGaAs QWs. We analyze different approaches to controlling emission spectra of these QWs.
dc.format.extentС. 315-319;
dc.identifier.citationComparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy / Ladugin, MA [et al.] // Inorganic Materials. - 2019. - 55. - № 4. - P. 315-319;. - 10.1134/S0020168519040095
dc.identifier.doi10.1134/S0020168519040095
dc.identifier.urihttps://www.doi.org/10.1134/S0020168519040095
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85066788767&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000470331200001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18196
dc.relation.ispartofInorganic Materials
dc.titleComparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue4
oaire.citation.volume55
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