Publication:
Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride

Дата
2020
Авторы
Chubenko, E. B.
Baglov, A. V.
Leonenya, M. S.
Yablonskii, G. P.
Borisenko, V. E.
Journal Title
Journal ISSN
Volume Title
Издатель
Научные группы
Организационные подразделения
Организационная единица
Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. ​Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.​
Выпуск журнала
Аннотация
© 2020, Springer Science+Business Media, LLC, part of Springer Nature.The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 K were investigated. It was shown that the concentration of oxygen in the obtained material 4–5 at.% increases with increase of temperature and decreases with increase in the duration of the synthesis process. By measurements at reduced temperatures right down to 10 K it was possible to resolve bands due to radiative recombination processes in the photoluminescence spectra of the graphitic carbon nitride. It was found that increase of the synthesis temperature from 500 to 600°C and also increase of the duration at the given temperature from 30 to 240 min shift the maximum in the photoluminescence spectrum from 2.74 eV into the region of lower energies to 2.71–2.67 eV. This is due to the bigger role of the molecular system formed by the π bonds of carbon and nitrogen atoms with sp2 hybridization and characterized by a smaller forbidden band width in the emission of light. Transitions due to recombination through oxygen-induced levels in the forbidden band of the semiconductor lead to the appearance of a "tail" in the photoluminescence spectra in the region of low energies (2.40–2.33 eV). Increase of the carbon nitride synthesis temperature to 600°C leads to a change in the structure of the energy bands and to increase of the energy of the radiative transitions as a result of increase in the degree of doping with oxygen atoms and thermal stratifi cation.
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Цитирование
Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride / Chubenko, E.B. [et al.] // Journal of Applied Spectroscopy. - 2020. - 10.1007/s10812-020-00954-y
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