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Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier

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dc.contributor.authorGusev, A. S.
dc.contributor.authorSultanov, A. O.
dc.contributor.authorKatkov, A. V.
dc.contributor.authorRyndya, S. M.
dc.contributor.authorSiglovaya, N. V.
dc.contributor.authorKlochkov, A. N.
dc.contributor.authorRyzhuk, R. V.
dc.contributor.authorKargin, N. I.
dc.contributor.authorBorisenko, D. P.
dc.contributor.authorГусев, Александр Сергеевич
dc.contributor.authorСултанов, Азрет Оюсович
dc.contributor.authorКатков, Андрей Викторович
dc.contributor.authorРындя, Сергей Михайлович
dc.contributor.authorСигловая, Наталия Владимировна
dc.contributor.authorКлочков, Алексей Николаевич
dc.contributor.authorРыжук, Роман Валериевич
dc.contributor.authorКаргин, Николай Иванович
dc.contributor.authorБорисенко, Денис Петрович
dc.date.accessioned2024-12-04T12:33:14Z
dc.date.available2024-12-04T12:33:14Z
dc.date.issued2024
dc.format.extentС. 252-259
dc.identifier.citationAnalysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier / Gusev, A.S. [et al.] // Russian Microelectronics. - 2024. - 53. - № 3. - P. 252-259. - 10.1134/S1063739724600304
dc.identifier.doi10.1134/S1063739724600304
dc.identifier.urihttps://www.doi.org/10.1134/S1063739724600304
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85199774162&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/26154
dc.relation.ispartofRussian Microelectronics
dc.titleAnalysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue3
oaire.citation.volume53
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