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III-nitride HEMT Heterostructures with Ultrathin AlN Barrier: Obtaining and Experimental Application

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dc.contributor.authorGusev, A. S.
dc.contributor.authorSultanov, A. O.
dc.contributor.authorRyzhuk, R. V.
dc.contributor.authorNevolina, T. N.
dc.contributor.authorTsunvaza, D.
dc.contributor.authorSafaraliev, G. K.
dc.contributor.authorKargin, N. I.
dc.contributor.authorГусев, Александр Сергеевич
dc.contributor.authorСултанов, Азрет Оюсович
dc.contributor.authorРыжук, Роман Валериевич
dc.contributor.authorНеволина, Татьяна Николаевна
dc.contributor.authorЦунваза, Дамир
dc.contributor.authorСафаралиев, Гаджимет Керимович
dc.contributor.authorКаргин, Николай Иванович
dc.date.accessioned2025-05-21T15:46:06Z
dc.date.available2025-05-21T15:46:06Z
dc.date.issued2024
dc.format.extentС. 543-553
dc.identifier.citationIII-nitride HEMT Heterostructures with Ultrathin AlN Barrier: Obtaining and Experimental Application / Gusev, A. S. [et al.] // Russian Microelectronics. - 2024. - 53. - № 6. - P. 543-553. - 10.1134/S1063739724600857
dc.identifier.doi10.1134/S1063739724600857
dc.identifier.urihttps://www.doi.org/10.1134/S1063739724600857
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85218181609&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/37505
dc.relation.ispartofRussian Microelectronics
dc.titleIII-nitride HEMT Heterostructures with Ultrathin AlN Barrier: Obtaining and Experimental Application
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue6
oaire.citation.volume53
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