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Parametrization of a Microwave and the Noise Model of a Metamorphic 0.15 µm MHET InAlAs/InGaAs Transistor

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dc.contributor.authorGorelov, A. A.
dc.contributor.authorLokotko, V. V.
dc.contributor.authorKargin, N. I.
dc.contributor.authorVasilievsky, I. S.
dc.contributor.authorGrishakov, K. S.
dc.contributor.authorRyzhuk, R. V.
dc.contributor.authorГорелов, Андрей Алексеевич
dc.contributor.authorКаргин, Николай Иванович
dc.contributor.authorВасильевский, Иван Сергеевич
dc.contributor.authorГришаков, Константин Сергеевич
dc.contributor.authorРыжук, Роман Валериевич
dc.date.accessioned2024-11-29T16:07:16Z
dc.date.available2024-11-29T16:07:16Z
dc.date.issued2021
dc.description.abstract© 2021, Pleiades Publishing, Ltd.Abstract: AlGaAs MHEMT transistors are studied in the microwave frequency range with a gate length of 0.15 μm. It is found that the discrepancy between the experimental and theoretically calculated, within the model, S-parameters does not exceed 0.5% in the frequency range from 1 to 30 GHz. The static characteristics of the device are satisfactorily described by the indicated model in the voltage range of the runoff up to 2.5 V. For the analysis of the noise characteristics, the Fukui model is used. It is found that the influence of the parasitic drain capacitance and the values of the drain and source inductances do not significantly affect the noise characteristics of the transistor, and an increase in the parasitic capacitance and a decrease in the parasitic gate inductance can lead to a significant reduction in the high-frequency noise figure.
dc.format.extentС. 170-177
dc.identifier.citationParametrization of a Microwave and the Noise Model of a Metamorphic 0.15 µm MHET InAlAs/InGaAs Transistor / Gorelov, A.A. [et al.] // Russian Microelectronics. - 2021. - 50. - № 3. - P. 170-177. - 10.1134/S1063739721030057
dc.identifier.doi10.1134/S1063739721030057
dc.identifier.urihttps://www.doi.org/10.1134/S1063739721030057
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85106045440&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/24160
dc.relation.ispartofRussian Microelectronics
dc.titleParametrization of a Microwave and the Noise Model of a Metamorphic 0.15 µm MHET InAlAs/InGaAs Transistor
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue3
oaire.citation.volume50
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