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Zn ION IMPLANTED Si MODIFICATION BY SWIFT Xe ION IRRADIATION

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dc.contributor.authorPrivezentsev, V. V.
dc.contributor.authorSkuratov, V. A.
dc.contributor.authorKulikauskas, V. S.
dc.contributor.authorMakunin, A. V.
dc.contributor.authorKsenich, S. V.
dc.contributor.authorSteinman, E. A.
dc.contributor.authorTereshchenko, A. N.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-11-21T08:53:36Z
dc.date.available2024-11-21T08:53:36Z
dc.date.issued2017
dc.description.abstractThe properties of metal nanoparticles (NPs) are comprehensively investigated because of its possible application in modern opto/microelectronic devices. Metal zinc NPs can be use in UV photo-detectors based on surface plasmon resonance phenomena [1]. There are a number of publications attempted to the formation of metal NPs by supersaturation of silicon with these metals. Among them there are works connected with formation of Zn NPs in Si ion implantation [2-4]. In recent years, there were much attention has been paid to the problems of creating combined microelectronics and photonics systems on silicon substrate. So silicon is non-direct semiconductor, it is not a convenient material for these purposes. The important task is the search for ways to synthesize NPs with a narrow size distribution. Swift heavy ion irradiation (SHI) beams allows selectivity to control the dimensions of formed NPs [5]. As known SHI irradiation lead to formation of so-called latent tracks (nanometer-sized disordered regions around ion trajectory) in many oxide crystals and corresponding track-associated radiation damage may induce the change of NP form from spherical to ellipsoidal. This effect is most noticeable for multiple (about 100 times) SHI impacts [6]. In this work the Zn nanoparticles were synthesized in Si by high-dose and low-energy Zn ion implantation. Then there was carried out the modification of implanted samples by high-energy Xe ion irradiation.
dc.identifier.citationZn ION IMPLANTED Si MODIFICATION BY SWIFT Xe ION IRRADIATION [Text.] / Privezentsev V. V. [и тд.] //Взаимодействие ионов с поверхностью «ВИП – 2017»: труды XXIII Международной конференции Том 3. - 2017. - С. 58-61
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18091
dc.publisherНИЯУ МИФИ
dc.subjectКонференции НИЯУ МИФИ
dc.titleZn ION IMPLANTED Si MODIFICATION BY SWIFT Xe ION IRRADIATION
dc.typeArticle
dspace.entity.typePublication
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2017_Взаимодействие ионов с поверхностью (ВИП)