Publication: Fabrication and Characterization of Si/PEDOT: PSS-Based Heterojunction Solar Cells
| dc.contributor.author | Venkatesan, R. | |
| dc.contributor.author | Maideen, S. M. T. S. K. | |
| dc.contributor.author | Chandhiran, S. | |
| dc.contributor.author | Venkatachalapathy, V. | |
| dc.contributor.author | Венкатачалапатху, Вишнукантхан | |
| dc.date.accessioned | 2024-12-25T11:39:21Z | |
| dc.date.available | 2024-12-25T11:39:21Z | |
| dc.date.issued | 2022 | |
| dc.description.abstract | In this study, we fabricated a planar Si/PEDOT: PSS heterojunction solar cell using three different solvents—ethylene glycol, acetonitrile, and dimethyl sulfoxide—to find the best one. The fabricated samples were characterized by diffuse reflectance spectroscopy, scanning electron microscopy, X-ray diffraction, and current–voltage. Diffused reflectance spectrum analysis showed reduced reflectance compared to the bare silicon wafers. The absorbance spectrum shows the change in absorption of the Si-coated PEDOT: PSS which was more than a 50% increase in the UV region, and for the EG sample, there was a 20% increase in the entire visible spectrum. This indicates that the solvent plays a major role in the bandgap between the Si and Si/PEDOT: PSS. Scanning electron microscope (SEM) was used to examine the surface morphology of Si/PEDOT: PSS as agglomerated, island-formed surfaces and carbon-layered Si-PEDOT: PSS. Cross-sectional images show the thickness of the PEDOT: PSS layer on the silicon wafer surface. The X-ray diffraction (XRD) pattern shows the characteristic peaks for silicon (69.5°), and Si/PEDOT: PSS shows a forbidden Si (200) peak at 32°. Current–voltage measurements have shown the characteristic diode curve for all fabricated cells. This characteristic diode curve indicated the presence of a heterojunction. Ethylene glycol-containing cells showed current output as 0.2 μA with Voc of 0.2 V. | |
| dc.identifier.citation | Fabrication and Characterization of Si/PEDOT: PSS-Based Heterojunction Solar Cells / Venkatesan, R. [et al.] // Electronics (Switzerland). - 2022. - 11. - № 24. - 10.3390/electronics11244145 | |
| dc.identifier.doi | 10.3390/electronics11244145 | |
| dc.identifier.uri | https://www.doi.org/10.3390/electronics11244145 | |
| dc.identifier.uri | https://www.scopus.com/record/display.uri?eid=2-s2.0-85144865832&origin=resultslist | |
| dc.identifier.uri | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000902447700001 | |
| dc.identifier.uri | https://openrepository.mephi.ru/handle/123456789/27765 | |
| dc.relation.ispartof | Electronics (Switzerland) | |
| dc.title | Fabrication and Characterization of Si/PEDOT: PSS-Based Heterojunction Solar Cells | |
| dc.type | Article | |
| dspace.entity.type | Publication | |
| oaire.citation.issue | 24 | |
| oaire.citation.volume | 11 | |
| relation.isAuthorOfPublication | c069e845-0cc5-41ac-bd9e-7378f802fcda | |
| relation.isAuthorOfPublication.latestForDiscovery | c069e845-0cc5-41ac-bd9e-7378f802fcda | |
| relation.isOrgUnitOfPublication | ba0b4738-e6bd-4285-bda5-16ab2240dbd1 | |
| relation.isOrgUnitOfPublication.latestForDiscovery | ba0b4738-e6bd-4285-bda5-16ab2240dbd1 |