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Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation

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dc.contributor.authorGromov, D.
dc.contributor.authorElesin, V.
dc.contributor.authorГромов, Дмитрий Викторович
dc.contributor.authorЕлесин, Вадим Владимирович
dc.date.accessioned2024-11-21T18:44:24Z
dc.date.available2024-11-21T18:44:24Z
dc.date.issued2019
dc.description.abstractThe investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes. It has been demonstrated that GaAs MESFET, pHEMT and RTDs may show the long-term parameter recovery undo pulsed ionizing exposure.
dc.identifier.citationGromov, D. Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation / Gromov, D, Elesin, V // 29TH INTERNATIONAL CRIMEAN CONFERENCE: MICROWAVE and TELECOMMUNICATION TECHNOLOGY (CRIMICO2019). - 2019. - 30. - 10.1051/itmconf/20193010005
dc.identifier.doi10.1051/itmconf/20193010005
dc.identifier.urihttps://www.doi.org/10.1051/itmconf/20193010005
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000568227400142
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/19561
dc.relation.ispartof29TH INTERNATIONAL CRIMEAN CONFERENCE: MICROWAVE and TELECOMMUNICATION TECHNOLOGY (CRIMICO2019)
dc.titleLong-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation
dc.typeProceedings Paper
dspace.entity.typePublication
oaire.citation.volume30
relation.isAuthorOfPublication8a7ea792-43f1-4137-b916-abf76616e7ee
relation.isAuthorOfPublication608226cb-7326-48db-8860-0267814b0820
relation.isAuthorOfPublication.latestForDiscovery8a7ea792-43f1-4137-b916-abf76616e7ee
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
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