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SOI CMOS, SiGe BiCMOS, GaAs HBT and GaAs PHEMT Technologies Characterization for Radiation-Tolerant Microwave Applications

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dc.contributor.authorSotskov, D. I.
dc.contributor.authorKuznetsov, A. G.
dc.contributor.authorElesin, V. V.
dc.contributor.authorUsachev, N. A.
dc.contributor.authorChukov, G. V.
dc.contributor.authorNikiforov, A. Y.
dc.contributor.authorСотсков, Денис Иванович
dc.contributor.authorКузнецов, Александр Геннадьевич
dc.contributor.authorЕлесин, Вадим Владимирович
dc.contributor.authorУсачев, Николай Александрович
dc.contributor.authorЧуков, Георгий Викторович
dc.contributor.authorНикифоров, Александр Юрьевич
dc.date.accessioned2024-11-29T16:23:26Z
dc.date.available2024-11-29T16:23:26Z
dc.date.issued2021
dc.description.abstract© 2021 IEEE.Radiation-oriented (RO-) and microwave (MW) characterization of the several process technologies - CMOS silicon-on-insulator (SOI) 180 nm process, CMOS 90 nm process, SiGe BiCMOS 0.42/0.25 μm process, GaAs heterojunction bipolar transistor (HBT) 2 μm process and GaAs pseudomorphic high electron mobility transistor (PHEMT) 0.5 μm process, which suitable for the development of radiation-tolerance transceiver integrated circuits with operating frequencies up to 30 GHz are presented. The results of MW-characterization showed two process technologies manufacturing in "foundry"mode - CMOS SOI 180 nm and CMOS 90 nm potentiality for the development of transceiver ICs with operating frequencies above 3 GHz and 12 GHz respectively. Obtained experimental results allow to determine radiation-tolerance indicators for the total ionizing dose, neutrons, impulse exposure and heavy ions and specify critical elements and IP-block fragments for given processes. Experimental data can be used at the first step of reasonable choice of process technologies for radiation-tolerant transceiver design.
dc.identifier.citationSOI CMOS, SiGe BiCMOS, GaAs HBT and GaAs PHEMT Technologies Characterization for Radiation-Tolerant Microwave Applications / Sotskov, D.I. [et al.] // SIBCON 2021 - International Siberian Conference on Control and Communications. - 2021. - 10.1109/SIBCON50419.2021.9438923
dc.identifier.doi10.1109/SIBCON50419.2021.9438923
dc.identifier.urihttps://www.doi.org/10.1109/SIBCON50419.2021.9438923
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85107682050&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000680842100071
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/24202
dc.relation.ispartofSIBCON 2021 - International Siberian Conference on Control and Communications
dc.titleSOI CMOS, SiGe BiCMOS, GaAs HBT and GaAs PHEMT Technologies Characterization for Radiation-Tolerant Microwave Applications
dc.typeConference Paper
dspace.entity.typePublication
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