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Thermal stability of tantalum nitride based thin film resistors

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dc.contributor.authorShostachenko, S. A.
dc.contributor.authorZakharchenko, R. V.
dc.contributor.authorRyzhuk, R. V.
dc.contributor.authorLeshchev, S. V.
dc.contributor.authorЗахарченко, Роман Викторович
dc.contributor.authorРыжук, Роман Валериевич
dc.contributor.authorЛещев, Сергей Валерьевич
dc.date.accessioned2024-11-21T08:23:10Z
dc.date.available2024-11-21T08:23:10Z
dc.date.issued2019
dc.description.abstract© 2019 Published under licence by IOP Publishing Ltd. Tantalum nitride thin films were deposited on Al2O3 substrates by the dc-magnetron sputtering technique. The nitrogen content in the argon/nitrogen flow varied from 5 to 50%. Structural properties were studied using X-ray diffraction. The ratio of Ar:N2 was 4:1; the ratio of Ta:N became 1:1. Sheet resistance depends on thickness and is in the range of 20 - 80 Ω/□ due to thickness 100 - 50 nm. The TaN films deposited at a nitrogen/argon ratio of 20% show the thermal stability of the resistance in the 25-400°C temperature range. Sheet resistance degradation was ∼ 5%. The TCR value was determined in the range of 25 - 300 C and was equal to - 21 ppm/K.
dc.identifier.citationThermal stability of tantalum nitride based thin film resistors / Shostachenko, S.A. [et al.] // IOP Conference Series: Materials Science and Engineering. - 2019. - 498. - № 1. - 10.1088/1757-899X/498/1/012014
dc.identifier.doi10.1088/1757-899X/498/1/012014
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/498/1/012014
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85065595497&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000472784800014
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/17951
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleThermal stability of tantalum nitride based thin film resistors
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume498
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