Publication:
Microwave plasma-assisted chemical vapor deposition of microcrystalline diamond films via graphite etching under different hydrogen flow rates

Файлы
c9ce00120d.pdf(2.94 MB)
Дата
2019
Авторы
Yao, K.
Dai, B.
Tan, X.
Yang, L.
Ralchenko, V.
Journal Title
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Volume Title
Издатель
Научные группы
Организационные подразделения
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Организационная единица
Институт лазерных и плазменных технологий
Стратегическая цель Института ЛаПлаз – стать ведущей научной школой и ядром развития инноваций по лазерным, плазменным, радиационным и ускорительным технологиям, с уникальными образовательными программами, востребованными на российском и мировом рынке образовательных услуг.
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Аннотация
© The Royal Society of Chemistry. Diamond films on Si substrates were synthesized in a chemical vapor deposition (CVD) reactor with graphite plates as the carbon source, which were etched using hydrogen plasma. The effect of the hydrogen flow rate (13 to 200 sccm) on the diamond growth rate, morphology, and quality was investigated. While only nanocrystalline diamond was produced at the lowest flow rate of 13 sccm, microcrystalline diamond films were grown at a higher H 2 flow rate, whose growth rate increased from 1.7 μm h −1 to ∼5 μm h −1 with the hydrogen flow rate decreasing from 200 sccm to 25 sccm, but at the expense of quality. The structure degradation of the films was quantified with Raman spectroscopy and XPS analysis. These results are ascribed to an increase of abundance of the produced hydrocarbon radicals, such as C 2 and CH with reduced hydrogen flow rates, as deduced from the optical emission spectra of the plasma in the course of graphite-etching/diamond-deposition.
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Microwave plasma-assisted chemical vapor deposition of microcrystalline diamond films via graphite etching under different hydrogen flow rates / Yao, K. [et al.] // CrystEngComm. - 2019. - 21. - № 15. - P. 2502-2507. - 10.1039/C9CE00120D
URI
https://www.doi.org/10.1039/C9CE00120D
 https://www.scopus.com/record/display.uri?eid=2-s2.0-85064079095&origin=resultslist
 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000471033200017
 https://openrepository.mephi.ru/handle/123456789/16857
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