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Radiation hardness study using SiPMs with single-cell readout

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dc.contributor.authorGarutti, E.
dc.contributor.authorKaminsky, A.
dc.contributor.authorMartens, S.
dc.contributor.authorSchwandt, J.
dc.contributor.authorBychkova, O.
dc.contributor.authorParygin, P.
dc.contributor.authorPopova, E.
dc.contributor.authorStifutkin, A.
dc.contributor.authorСтифуткин, Алексей Анатольевич
dc.date.accessioned2024-12-26T09:36:28Z
dc.date.available2024-12-26T09:36:28Z
dc.date.issued2022
dc.description.abstract© 2022 The Author(s)A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to Φ = 5e13 cm−2. The cell has a pitch of 15μm. The fluence dependence of gain and turn-off voltage are reported. A reduction of the gain by 19% and an increase of Voff by ≈0.5 V is observed after Φ = 5e13 cm−2.
dc.identifier.citationRadiation hardness study using SiPMs with single-cell readout / Garutti, E. [et al.] // Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. - 2022. - 1031. - 10.1016/j.nima.2022.166533
dc.identifier.doi10.1016/j.nima.2022.166533
dc.identifier.urihttps://www.doi.org/10.1016/j.nima.2022.166533
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85126633955&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000796007600003
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/28848
dc.relation.ispartofNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
dc.titleRadiation hardness study using SiPMs with single-cell readout
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume1031
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relation.isAuthorOfPublication.latestForDiscovery4f98ec66-ae80-4177-9866-b876f9728445
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