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Broadband push-pull power amplifier design methodology based on the GaN component base for high-performance nonlinear junction detectors

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dc.contributor.authorKlokov, V.
dc.contributor.authorKargin, N.
dc.contributor.authorGarmash, A. A.
dc.contributor.authorGuzniaeva, E.
dc.contributor.authorКлоков, Владимир Александрович
dc.contributor.authorКаргин, Николай Иванович
dc.contributor.authorГармаш, Александр Александрович
dc.contributor.authorГузняева, Екатерина Александровна
dc.date.accessioned2024-11-21T18:44:59Z
dc.date.available2024-11-21T18:44:59Z
dc.date.issued2019
dc.description.abstractThe paper presents a description of design methodology for wide-band push-pull large-signal power amplifier based on GaN transistor with an output power of more than 10 W for high-performance Nonlinear Junction Detectors, which allows achieving optimal convergence of the theoretical model in practice, as well as increasing the efficiency of the power amplifier while maintaining a linear gain characteristic.
dc.identifier.citationBroadband push-pull power amplifier design methodology based on the GaN component base for high-performance nonlinear junction detectors / Klokov, V [et al.] // 29TH INTERNATIONAL CRIMEAN CONFERENCE: MICROWAVE and TELECOMMUNICATION TECHNOLOGY (CRIMICO2019). - 2019. - 30. - 10.1051/itmconf/20193001011
dc.identifier.doi10.1051/itmconf/20193001011
dc.identifier.urihttps://www.doi.org/10.1051/itmconf/20193001011
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000568227400011
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/19562
dc.relation.ispartof29TH INTERNATIONAL CRIMEAN CONFERENCE: MICROWAVE and TELECOMMUNICATION TECHNOLOGY (CRIMICO2019)
dc.titleBroadband push-pull power amplifier design methodology based on the GaN component base for high-performance nonlinear junction detectors
dc.typeProceedings Paper
dspace.entity.typePublication
oaire.citation.volume30
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