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IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing

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dc.contributor.authorCherkova, S. G.
dc.contributor.authorVolodin, V. A.
dc.contributor.authorSkuratov, V. A.
dc.contributor.authorStoffel, M.
dc.contributor.authorRinnert, H.
dc.contributor.authorVergnat, M.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-12-25T19:44:14Z
dc.date.available2024-12-25T19:44:14Z
dc.date.issued2022
dc.format.extentС. 633-642
dc.identifier.citationIR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing / Cherkova, S. G. [et al.] // Optoelectronics, Instrumentation and Data Processing. - 2022. - 58. - № 6. - P. 633-642. - 10.3103/S8756699022060024
dc.identifier.doi10.3103/S8756699022060024
dc.identifier.urihttps://www.doi.org/10.3103/S8756699022060024
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85160003543&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/28510
dc.relation.ispartofOptoelectronics, Instrumentation and Data Processing
dc.titleIR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue6
oaire.citation.volume58
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