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Correlation analysis of vibration modes in physical vapour deposited Bi2Se3 thin films probed by the Raman mapping technique

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dc.contributor.authorNiherysh, K. A.
dc.contributor.authorAndzane, J.
dc.contributor.authorMikhalik, M. M.
dc.contributor.authorZavadsky, S. M.
dc.contributor.authorDobrokhotov, P. L.
dc.contributor.authorPrischepa, S. L.
dc.contributor.authorKomissarov, I. V.
dc.contributor.authorПрищепа, Сергей Леонидович
dc.date.accessioned2024-11-29T22:08:17Z
dc.date.available2024-11-29T22:08:17Z
dc.date.issued2021
dc.description.abstractIn this work, the Raman spectroscopy mapping technique is used for the analysis of mechanical strain in Bi2Se3 thin films of various (3-400 nm) thicknesses synthesized by physical vapour deposition on amorphous quartz and single-layer graphene substrates. The evaluation of strain effects is based on the correlation analysis of in-plane (E2g) and out-of-plane (A21g) Raman mode positions. For Bi2Se3 films deposited on quartz, experimental datapoints are scattered along the line with a slope of similar to 0.85, related to the distribution of hydrostatic strain. In contrast to quartz/Bi2Se3 samples, for graphene/Bi2Se3 heterostructures with the same thicknesses, an additional negative slope of similar to-0.85, which can be associated with the distribution of the in-plane (a-b) biaxial tensile strain due to the film-substrate lattice mismatch, is observed. The algorithm of phonon deformation potential (PDP) calculation based on the proposed strain analysis for the 3 nm thick Bi2Se3 film deposited on the graphene substrate, where the strain is considered to be coherent across the thickness, is demonstrated. The PDPs for biaxial in-plane strain of the Bi2Se3 3 nm film in in-plane and out-of-plane modes are equal to -7.64 cm(-1)/% and -6.97 cm(-1)/%, respectively.
dc.identifier.citationCorrelation analysis of vibration modes in physical vapour deposited Bi2Se3 thin films probed by the Raman mapping technique / Niherysh, KA [et al.] // Nanoscale Advances. - 2021. - 10.1039/d1na00390a
dc.identifier.doi10.1039/d1na00390a
dc.identifier.urihttps://www.doi.org/10.1039/d1na00390a
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85118952307&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000704748200001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/24868
dc.relation.ispartofNanoscale Advances
dc.titleCorrelation analysis of vibration modes in physical vapour deposited Bi2Se3 thin films probed by the Raman mapping technique
dc.typeArticle
dspace.entity.typePublication
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