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Application of two-photon absorption technique for single-event effects simulation in silicon microelectronic devices

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dc.contributor.authorEgorov, A. N.
dc.contributor.authorMavritskii, O. B.
dc.contributor.authorPechenkin, A. A.
dc.contributor.authorSavchenkov, D. V.
dc.contributor.authorKholina, M. S.
dc.contributor.authorЕгоров, Андрей Николаевич
dc.contributor.authorМаврицкий, Олег Борисович
dc.contributor.authorПеченкин, Александр Александрович
dc.contributor.authorХолина, Марта Сергеевна
dc.date.accessioned2024-12-25T15:00:49Z
dc.date.available2024-12-25T15:00:49Z
dc.date.issued2022
dc.description.abstract© 2022 SPIE.The application of two-photon absorption (TPA) for local nonequilibrium charge generation in the semiconductor microelectronic structures improves the 3D-spatial resolution of optical testing techniques (such as OBIC and similar), as compared to those, based on single-photon absorption (SPA). In this paper we discuss the results of laser single-event effect (SEE) simulation in digital potentiometer AD8400, using the TPA of tightly focused femtosecond laser radiation. The experiments were performed at the setup, which includes the tunable optical parametric amplifier with output wavelength in 900…1200 nm region. The results were compared to those obtained by SPA technique on the same experimental setup.
dc.identifier.citationApplication of two-photon absorption technique for single-event effects simulation in silicon microelectronic devices / Egorov, A.N. [et al.] // Proceedings of SPIE - The International Society for Optical Engineering. - 2022. - 12143. - 10.1117/12.2621553
dc.identifier.doi10.1117/12.2621553
dc.identifier.urihttps://www.doi.org/10.1117/12.2621553
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85133139195&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000838077500019
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/28050
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering
dc.titleApplication of two-photon absorption technique for single-event effects simulation in silicon microelectronic devices
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.volume12143
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