Publication: MODELING OF THERMAL CONDUCTIVITY OF SI IN THE RANGE FROM THE NORMAL TO NEAR-CRITICAL CONDITIONS
Дата
2019
Авторы
Demin, M. M.
Koroleva, O. N.
Mazhukin, V. I.
Mazhukin, A. V.
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Аннотация
In a wide temperature range, including the semiconductor-metal phase transition region and the near-critical region, the results of modeling the silicon phonon thermal conductivity are presented. Since the transfer of thermal energy is carried out by phonons and free charge carriers, it is necessary to take into account both the contribution of phonons and electrons in the total thermal conductivity. In contrast to metals, heat transfer in silicon in the solid state is determined by phonon thermal conductivity. Although the contribution of the electronic component to the total thermal conductivity increases with increasing temperature, the inclusion of phonon thermal conductivity is of particular importance in liquid silicon. At higher temperatures, phonon thermal conductivity plays an important role in the modeling of the mechanisms of interaction of pulsed laser radiation with silicon in the framework of the two-temperature continuum model. Obtaining the temperature dependence of phonon thermal conductivity in such a wide temperature range from experiment is problematic. In this work, phonon thermal conductivity was obtained in the range 300 <= T <= 6500 K from molecular dynamics simulation using the KIHS potential.
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MODELING OF THERMAL CONDUCTIVITY OF SI IN THE RANGE FROM THE NORMAL TO NEAR-CRITICAL CONDITIONS / Demin, MM [et al.] // MATHEMATICA MONTISNIGRI. - 2019. - 45. - P. 85-94;. - 10.20948/mathmontis-2019-45-7