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Growth of Thin Graphite Films on a Dielectric Substrate using Heteroepitaxial Synthesis

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dc.contributor.authorSorokin, I. A.
dc.contributor.authorKolodko, D. V.
dc.contributor.authorLuzanov, V. A.
dc.contributor.authorShustin, E. G.
dc.contributor.authorСорокин, Иван Александрович
dc.contributor.authorКолодко, Добрыня Вячеславич
dc.date.accessioned2024-11-26T14:25:53Z
dc.date.available2024-11-26T14:25:53Z
dc.date.issued2020
dc.description.abstractA technique for growing thin graphite films on a dielectric substrate by annealing the Al2O3(0001)/Ni(111)/ta-C structure has been optimized. This technique is based on catalytic decomposition of hydrocarbons on the surface of a single-crystal catalyst metal film on a dielectric substrate and subsequent diffusion and crystallization of carbon between the metal film and the substrate. A thin graphite film with a low density of crystal-structure defects is obtained on the dielectric substrate after chemical etching of the metal film.
dc.format.extentС. 497-500
dc.identifier.citationGrowth of Thin Graphite Films on a Dielectric Substrate using Heteroepitaxial Synthesis / Sorokin, IA [et al.] // Technical Physics Letters. - 2020. - 46. - № 5. - P. 497-500. - 10.1134/S1063785020050260
dc.identifier.doi10.1134/S1063785020050260
dc.identifier.urihttps://www.doi.org/10.1134/S1063785020050260
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85129489056&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000540267500025
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/21955
dc.relation.ispartofTechnical Physics Letters
dc.titleGrowth of Thin Graphite Films on a Dielectric Substrate using Heteroepitaxial Synthesis
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue5
oaire.citation.volume46
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