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Smart Sub-Microelectronics Radiation Behavior Trends and Test Facilities Evolution

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dc.contributor.authorNikiforov, A. Y.
dc.contributor.authorGorbunov, M. S.
dc.contributor.authorSmolin, A. A.
dc.contributor.authorDavydov, G. G.
dc.contributor.authorBoychenko, D. V.
dc.contributor.authorНикифоров, Александр Юрьевич
dc.contributor.authorДавыдов, Георгий Георгиевич
dc.contributor.authorБойченко, Дмитрий Владимирович
dc.date.accessioned2024-11-29T22:37:42Z
dc.date.available2024-11-29T22:37:42Z
dc.date.issued2021
dc.description.abstract© 2021 IEEE.We provide a brief evolution trends overview of the modern microelectronic devices and its radiation behaviour, focusing on new structures and materials effects due to Total Ionizing Dose (TID) and Single Event effects (SEE) in CMOS elements. Evolution of test facilities driven by these changes in radiation behaviour of modern devices is also considered.
dc.format.extentС. 37-44
dc.identifier.citationSmart Sub-Microelectronics Radiation Behavior Trends and Test Facilities Evolution / Nikiforov, A.Y. [et al.] // Proceedings of the International Conference on Microelectronics, ICM. - 2021. - 2021-September. - P. 37-44. - 10.1109/MIEL52794.2021.9569095
dc.identifier.doi10.1109/MIEL52794.2021.9569095
dc.identifier.urihttps://www.doi.org/10.1109/MIEL52794.2021.9569095
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85118437216&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/24917
dc.relation.ispartofProceedings of the International Conference on Microelectronics, ICM
dc.titleSmart Sub-Microelectronics Radiation Behavior Trends and Test Facilities Evolution
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.volume2021-September
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