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Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICs

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dc.contributor.authorChumakov, A. I.
dc.contributor.authorBobrovsky, D. V.
dc.contributor.authorPechenkin, A. A.
dc.contributor.authorSavchenkov, D. V.
dc.contributor.authorSorokoumov, G. S.
dc.contributor.authorShvetsov-Shilovskiy, I. I.
dc.contributor.authorЧумаков, Александр Иннокентьевич
dc.contributor.authorБобровский, Дмитрий Владимирович
dc.contributor.authorПеченкин, Александр Александрович
dc.contributor.authorСорокоумов, Георгий Сергеевич
dc.contributor.authorШвецов-Шиловский, Иван Иванович
dc.date.accessioned2024-11-21T10:25:01Z
dc.date.available2024-11-21T10:25:01Z
dc.date.issued2019
dc.description.abstract© 2019, Pleiades Publishing, Ltd.Abstract: The results of research on nonstationary latchup effects (LEs) under the influence of heavy charged particles and ionizing radiation pulses, which are spontaneously counteracted depending on the operating conditions, are presented. This behavior is caused by the effects of the rail span collapse inside the complementary metal-oxide-system (CMOS) of very large scale integrated (VLSI) circuits. The experimental studies are carried out on both the ion accelerator and the laser facilities.
dc.format.extentС. 250-254
dc.identifier.citationMechanisms of Initiation of Unstable Latchup Effects in CMOS ICs / Chumakov, A.I. [et al.] // Russian Microelectronics. - 2019. - 48. - № 4. - P. 250-254. - 10.1134/S1063739719040036
dc.identifier.doi10.1134/S1063739719040036
dc.identifier.urihttps://www.doi.org/10.1134/S1063739719040036
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85069494693&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18426
dc.relation.ispartofRussian Microelectronics
dc.titleMechanisms of Initiation of Unstable Latchup Effects in CMOS ICs
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue4
oaire.citation.volume48
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