Publication: Simulation of Transients in a Majority Gate upon Switching and Collecting Charge from the Track of a Single Particle
| dc.contributor.author | Katunin, Y. V. | |
| dc.contributor.author | Stenin, V. Y. | |
| dc.date.accessioned | 2024-11-27T08:02:59Z | |
| dc.date.available | 2024-11-27T08:02:59Z | |
| dc.date.issued | 2020 | |
| dc.description.abstract | © 2020, Pleiades Publishing, Ltd.Abstract: The results of the simulation of a triple majority element during the charge collection from a particle track by transistors and simultaneous input switching are reported. The simulation is made using the 3D TCAD physical models of CMOS transistors according to the bulk 65-nm design rule for tracks with a linear energy transfer of 60 MeV cm2/mg to them by a particle. It is found that the duration of the nonstationary state of the AND and OR gates included in a majority gate during the charge collection and the simultaneous input switching is practically independent of the track formation time for each specific point of the track input into a group of transistors. At the beginning of the charge collection, before the switching signals, the gates switch either before the occurrence of switching signals at the inputs, when the off transistors start collecting the charge, or with an additional delay, when the initially on transistors start collecting the charge. As a result, the switching time of the majority gate ranges from 9 to 600 ps, depending on a track input point and signals at the inputs. For the tracks that occur after the input switching of the gate, a noise pulse which has a duration of the nonstationary state characteristic of a specific track input point is generated at the gate output. | |
| dc.format.extent | С. 332-344 | |
| dc.identifier.citation | Katunin, Y. V. Simulation of Transients in a Majority Gate upon Switching and Collecting Charge from the Track of a Single Particle / Katunin, Y.V., Stenin, V.Y. // Russian Microelectronics. - 2020. - 49. - № 5. - P. 332-344. - 10.1134/S1063739720040101 | |
| dc.identifier.doi | 10.1134/S1063739720040101 | |
| dc.identifier.uri | https://www.doi.org/10.1134/S1063739720040101 | |
| dc.identifier.uri | https://www.scopus.com/record/display.uri?eid=2-s2.0-85091421564&origin=resultslist | |
| dc.identifier.uri | https://openrepository.mephi.ru/handle/123456789/22366 | |
| dc.relation.ispartof | Russian Microelectronics | |
| dc.title | Simulation of Transients in a Majority Gate upon Switching and Collecting Charge from the Track of a Single Particle | |
| dc.type | Article | |
| dspace.entity.type | Publication | |
| oaire.citation.issue | 5 | |
| oaire.citation.volume | 49 | |
| relation.isOrgUnitOfPublication | 06e1796d-4f55-4057-8d7e-bb2f3b5676f5 | |
| relation.isOrgUnitOfPublication.latestForDiscovery | 06e1796d-4f55-4057-8d7e-bb2f3b5676f5 |