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Radiation hardness studies of pin-diode detectors irradiated with heavy ions

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dc.contributor.authorKrutul, K.
dc.contributor.authorNapiorkowski, P. J.
dc.contributor.authorHadynska-Klek, K.
dc.contributor.authorWrzosek-Lipska, K.
dc.contributor.authorSkuratov, V. A.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-11-27T10:06:21Z
dc.date.available2024-11-27T10:06:21Z
dc.date.issued2020
dc.description.abstract© 2020 Jagellonian University. All rights reserved.Evaluation of the properties of a set of PIN-diode-type semiconductor detectors was performed at the Heavy Ion Laboratory University of Warsaw in Poland with the α particles from 241Am. In order to monitor the radiation damage process in a controlled conditions, the in-beam irradiation experiments were performed using heavy-ion beams: 12C and 20Ne at HIL in Warsaw, and 132Xe at JINR in Dubna. The properties of the irradiated PIN-diode detectors were tested using the positron annihilation spectroscopy. The preliminary results of the experiments are presented.
dc.format.extentС. 861-867
dc.identifier.citationRadiation hardness studies of pin-diode detectors irradiated with heavy ions / Krutul, K. [et al.] // Acta Physica Polonica B, Proceedings Supplement. - 2020. - 13. - № 4. - P. 861-867. - 10.5506/APHYSPOLBSUPP.13.861
dc.identifier.doi10.5506/APHYSPOLBSUPP.13.861
dc.identifier.urihttps://www.doi.org/10.5506/APHYSPOLBSUPP.13.861
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dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/22613
dc.relation.ispartofActa Physica Polonica B, Proceedings Supplement
dc.titleRadiation hardness studies of pin-diode detectors irradiated with heavy ions
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue4
oaire.citation.volume13
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