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Raman study of polycrystalline si3n4 irradiated with swift heavy ions

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dc.contributor.authorZhumazhanova, A.
dc.contributor.authorMutali, A.
dc.contributor.authorIbrayeva, A.
dc.contributor.authorDauletbekova, A.
dc.contributor.authorSkuratov, V.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-11-29T22:50:21Z
dc.date.available2024-11-29T22:50:21Z
dc.date.issued2021
dc.description.abstract© 2021 by the authors. Licensee MDPI, Basel, Switzerland.A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 1011 cm−2 ÷ 4.87 × 1013 cm−2 ) and Bi (710 MeV, 1 × 1011 cm−2 ÷ 1 × 1013 cm−2 ) ions. It was shown that both the compressive and tensile stress fields were formed in the irradiated specimen, separated by a buffer zone that was located at a depth that coincided with the thickness of layer, amorphized due to multiple overlapping track regions. The compressive stresses were registered in a subsurface region, while at a greater depth, the tensile stresses were recorded and their levels reached the maximum value at the end of ion range. The size of the amorphous layer was evaluated from the dose dependence of the full width at half maximum (FWHM) (FWHM of the dominant 204 cm−1 line in the Raman spectra and scanning electron microscopy.
dc.identifier.citationRaman study of polycrystalline si3n4 irradiated with swift heavy ions / Zhumazhanova, A. [et al.] // Crystals. - 2021. - 11. - № 11. - 10.3390/cryst11111313
dc.identifier.doi10.3390/cryst11111313
dc.identifier.urihttps://www.doi.org/10.3390/cryst11111313
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85118950418&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000724110200001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/24938
dc.relation.ispartofCrystals
dc.titleRaman study of polycrystalline si3n4 irradiated with swift heavy ions
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue11
oaire.citation.volume11
relation.isAuthorOfPublicationa42d0cba-a1ca-4481-b526-7b326b53db08
relation.isAuthorOfPublication.latestForDiscoverya42d0cba-a1ca-4481-b526-7b326b53db08
relation.isOrgUnitOfPublicationba0b4738-e6bd-4285-bda5-16ab2240dbd1
relation.isOrgUnitOfPublication.latestForDiscoveryba0b4738-e6bd-4285-bda5-16ab2240dbd1
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