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Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer

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dc.contributor.authorGusev, A. S.
dc.contributor.authorKargin, N. I.
dc.contributor.authorRyndya, S. M.
dc.contributor.authorSafaraliev, G. K.
dc.contributor.authorSiglovaya, N. V.
dc.contributor.authorSmirnova, M. O.
dc.contributor.authorSolomatin, I. O.
dc.contributor.authorSultanov, A. O.
dc.contributor.authorTimofeev, A. A.
dc.contributor.authorГусев, Александр Сергеевич
dc.contributor.authorКаргин, Николай Иванович
dc.contributor.authorРындя, Сергей Михайлович
dc.contributor.authorСафаралиев, Гаджимет Керимович
dc.contributor.authorСигловая, Наталия Владимировна
dc.contributor.authorСмирнова, Марина Олеговна
dc.contributor.authorСултанов, Азрет Оюсович
dc.contributor.authorТимофеев, Алексей Афанасьевич
dc.date.accessioned2024-11-30T02:10:54Z
dc.date.available2024-11-30T02:10:54Z
dc.date.issued2021
dc.description.abstract© 2021, Pleiades Publishing, Ltd.Abstract: The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples.
dc.identifier.citationRelaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer / Gusev, A.S. [et al.] // Technical Physics. - 2021. - 10.1134/S1063784221060074
dc.identifier.doi10.1134/S1063784221060074
dc.identifier.urihttps://www.doi.org/10.1134/S1063784221060074
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85124368092&origin=resultslist
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dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/25251
dc.relation.ispartofTechnical Physics
dc.titleRelaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer
dc.typeArticle
dspace.entity.typePublication
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