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Morphology and photoluminescence properties of silicon nanoparticles deposited in helium-nitrogen mixtures maintained at low residual pressures

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dc.contributor.authorFronya, A. A.
dc.contributor.authorAntonenko, S. V.
dc.contributor.authorDerzhavin, S. I.
dc.contributor.authorKarpov, N. V.
dc.contributor.authorKharin, A. Yu.
dc.contributor.authorGarmash, A. A.
dc.contributor.authorKargin, N. I.
dc.contributor.authorKlimentov, S. M.
dc.contributor.authorTimoshenko, V. Yu.
dc.contributor.authorKabashin, A. V.
dc.contributor.authorФроня, Анастасия Андреевна
dc.contributor.authorАнтоненко, Сергей Васильевич
dc.contributor.authorГармаш, Александр Александрович
dc.contributor.authorКаргин, Николай Иванович
dc.contributor.authorКлиментов, Сергей Михайлович
dc.contributor.authorТимошенко, Виктор Юрьевич
dc.contributor.authorКабашин, Андрей Викторович
dc.date.accessioned2024-11-30T03:44:22Z
dc.date.available2024-11-30T03:44:22Z
dc.date.issued2021
dc.description.abstractWe elaborated a technique of pulsed laser ablation in gas mixtures (He-N2), maintained under residual pressures of 0.5-5 Torr to deposit silicon (Si)-based nanostructured films on a substrate. We show that the deposited films can exhibit strong photoluminescence (PL) emission with the position of peaks depending on the pressure of ambient gas and the ratio of gases in the mixture. Nanostructured films prepared in pure He gas exhibited a strong band in the infrared range (around 760 nm) and a weak band in the green range (550 nm), which were attributed to quantum-confined excitonic states in small Si nanocrystals and radiative transitions via the localized electronic states in silicon suboxide coating, respectively. In contrast, nanostructured films prepared in He-N2 mixtures exhibited more intense “green-yellow” PL band centered at 580 nm, which was attributed to a radiative recombination in amorphous oxynitride (a-SiNxOy) coating of Si nanocrystals. We also present a detailed analysis of morphology of nanostructures Si-based films prepared by laser ablation. Finally, we show that the nanocrystals can be removed from the substrate and milled by ultrasound to form aqueous solutions of colloidal Si nanopartiles. The fabricated Si-based nanocrystals present a promising object for theranostics, combining imaging functionality based on PL emission and a series of therapy functionalities (photo and radiofrequency hyperthermia, photodynamic therapy). © 2021 Institute of Physics Publishing. All rights reserved.
dc.format.extent012011
dc.identifier.citationMorphology and photoluminescence properties of silicon nanoparticles deposited in helium-nitrogen mixtures maintained at low residual pressures / Fronya A.A. [et al.] // Journal of Physics: Conference Series. - 2021. - 2058. - № 1. - 012011. - 10.1088/1742-6596/2058/1/012011
dc.identifier.doi10.1088/1742-6596/2058/1/012011
dc.identifier.urihttps://www.doi.org/10.1088/1742-6596/2058/1/012011
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85119469928&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/25387
dc.language.isorus
dc.relation.ispartofJournal of Physics: Conference Series
dc.titleMorphology and photoluminescence properties of silicon nanoparticles deposited in helium-nitrogen mixtures maintained at low residual pressures
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume2058
relation.isAuthorOfPublication1ba70fde-d68b-47d6-983c-9cc3b17740f3
relation.isAuthorOfPublicationaf8bd247-986f-4d88-a098-bf83445a35b4
relation.isAuthorOfPublication6f42ba0f-d3f2-4e29-825d-d32b06eaa93b
relation.isAuthorOfPublicationb63cacca-2813-4dee-964b-26cdc4e09e74
relation.isAuthorOfPublication08d6d476-247c-4c17-958a-8c1173dd1f60
relation.isAuthorOfPublication4cf6bcf1-0992-45ed-af93-68678d96a4da
relation.isAuthorOfPublicationb79a080b-900d-4655-ba2e-53fd552b3a15
relation.isAuthorOfPublication.latestForDiscovery1ba70fde-d68b-47d6-983c-9cc3b17740f3
relation.isOrgUnitOfPublicationc8407a6f-7272-450d-8d99-032352c76b55
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication543ffddb-d115-4466-be75-83b0f2c5a473
relation.isOrgUnitOfPublication.latestForDiscoveryc8407a6f-7272-450d-8d99-032352c76b55
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