Publication:
Enhancement of spontaneous emission of semiconductor quantum dots inside one-dimensional porous silicon photonic crystals

dc.contributor.authorDovzhenko, D.
dc.contributor.authorMartynov, I.
dc.contributor.authorSamokhvalov, P.
dc.contributor.authorOsipov, E.
dc.contributor.authorLednev, M.
dc.contributor.authorChistyakov, A.
dc.contributor.authorNabiev, I.
dc.contributor.authorМартынов, Игорь Леонидович
dc.contributor.authorСамохвалов, Павел Сергеевич
dc.contributor.authorОсипов, Евгений Валерьевич
dc.contributor.authorЧистяков, Александр Александрович
dc.contributor.authorНабиев, Игорь Руфаилович
dc.date.accessioned2024-11-27T07:29:57Z
dc.date.available2024-11-27T07:29:57Z
dc.date.issued2020
dc.description.abstractControlling spontaneous emission by modifying the local electromagnetic environment is of great interest for applications in optoelectronics, biosensing and energy harvesting. Although the development of devices based on one-dimensional porous silicon photonic crystals with embedded luminophores is a promising approach for applications, the efficiency of the embedded luminophores remains a key challenge because of the strong quenching of the emission due to the contact of the luminophores with the surface of porous silicon preventing the observation of interesting light-matter coupling effects. Here, we experimentally demonstrate an increase in the quantum dot (QD) spontaneous emission rate inside a porous silicon microcavity and almost an order of magnitude enhancement of QD photoluminescence intensity in the weak light-matter coupling regime. Furthermore, we have demonstrated drastic alteration of the QD spontaneous emission at the edge of the photonic band gap in porous silicon distributed Bragg reflectors and proved its dependence on the change in the density of photonic states. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
dc.format.extentС. 22705-22717
dc.identifier.citationEnhancement of spontaneous emission of semiconductor quantum dots inside one-dimensional porous silicon photonic crystals / Dovzhenko, D [et al.] // Optics Express. - 2020. - 28. - № 15. - P. 22705-22717. - 10.1364/OE.401197
dc.identifier.doi10.1364/OE.401197
dc.identifier.urihttps://www.doi.org/10.1364/OE.401197
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85089132139&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000560926100113
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/22264
dc.relation.ispartofOptics Express
dc.titleEnhancement of spontaneous emission of semiconductor quantum dots inside one-dimensional porous silicon photonic crystals
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue15
oaire.citation.volume28
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