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Effect of annealing temperature on thermo-diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

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dc.contributor.authorEfimova, A. I.
dc.contributor.authorLipkova, E. A.
dc.contributor.authorGonchar, K. A.
dc.contributor.authorPresnov, D. E.
dc.contributor.authorTimoshenko, V. Y.
dc.contributor.authorТимошенко, Виктор Юрьевич
dc.date.accessioned2024-11-26T15:21:22Z
dc.date.available2024-11-26T15:21:22Z
dc.date.issued2020
dc.description.abstract© 2020 John Wiley & Sons, Ltd.Arrays of silicon nanowires (SiNWs) with characteristic transverse nanowire size of the order of 100 nm were fabricated by metal-assisted chemical etching of monocrystalline silicon wafers followed by thermo-diffusional doping with boron and studied by means of Raman spectroscopy considering the Fano effect related to the free charge carriers (holes) in SiNWs. The hole concentration of the order of 1020 cm−3 was shown to be achieved for SiNWs annealed at 950–1000°C and the peak intensity of Raman scattering of SiNWs dropped exponentially with the increasing free-hole concentration. The obtained results can be used for the express diagnostics of the electrical properties of silicon nanostructures for applications in optoelectronics, sensorics, and thermoelectric devices.
dc.identifier.citationEffect of annealing temperature on thermo-diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy / Efimova, A.I. [et al.] // Journal of Raman Spectroscopy. - 2020. - 10.1002/jrs.5956
dc.identifier.doi10.1002/jrs.5956
dc.identifier.urihttps://www.doi.org/10.1002/jrs.5956
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85088303154&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000551117300001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/22094
dc.relation.ispartofJournal of Raman Spectroscopy
dc.titleEffect of annealing temperature on thermo-diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy
dc.typeArticle
dspace.entity.typePublication
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