Publication: Localization of Current Flow in Thermophotovoltaic Converters Based on InAsSbP/InAs Double Heterostructures
Дата
2020
Авторы
Matveev, B. A.
Ratushnyi, V. I.
Rybal'chenko, A. Y.
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Аннотация
© 2020, Pleiades Publishing, Ltd.Abstract: The electrical performance of thermophotovoltaic converters with a flip-chip design based on p-InAsSbP/n-InAs/n-InAsSbP double heterostructures with the substrate completely or partially removed is examined. The influence of resistance of different parts of the structure on the spatial distribution of current density in the active region is revealed, and the conditions for maximizing the efficiency of photocurrent collection and minimizing confluence are determined.
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Цитирование
Matveev, B. A. Localization of Current Flow in Thermophotovoltaic Converters Based on InAsSbP/InAs Double Heterostructures / Matveev, B.A., Ratushnyi, V.I., Rybal'chenko, A.Y. // Technical Physics. - 2020. - 65. - № 5. - P. 799-804. - 10.1134/S1063784220050187
URI
https://www.doi.org/10.1134/S1063784220050187
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https://openrepository.mephi.ru/handle/123456789/21880
https://www.scopus.com/record/display.uri?eid=2-s2.0-85085890376&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000536733200020
https://openrepository.mephi.ru/handle/123456789/21880