Publication: Optical properties of Gd3+-doped ZnO:SiO2 thin films
Дата
2019
Авторы
Hayrullina, Indira
Nagovitsyn, Ilya A.
Khoroshilov, Alexey V.
Sheshko, Tatiana F.
Boruleva, Ekaterina A.
Chudinova, Galina K.
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Аннотация
For the first time Gd3+-doped (0.4-0.9 mass.%) ZnO:SiO2 composite films were obtained using the sol-gel method. Optical properties of the films and their structures were studied by absorption and fluorescence spectroscopy and scanning electron microscopy (SEM). The obtained SEM images suggest that the surface morphology of the films does not change qualitatively. However, it was found that doping with Gd3+ ions leads to a significant increase in the ultraviolet luminescence (UVL) of ZnO in ZnO:SiO2 composite by 2.9-3.4 times (lambda(em) = 364 nm), which is accompanied by an increase in the band gap of Gd3+-doped films compared with non-doped films.
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Цитирование
Optical properties of Gd3+-doped ZnO:SiO2 thin films / Hayrullina, Indira [et al.] // Laser Physics Letters. - 2019. - 16. - № 8. - 10.1088/1612-202X/ab1bd8
URI
https://www.doi.org/10.1088/1612-202X/ab1bd8
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https://openrepository.mephi.ru/handle/123456789/18370
https://www.scopus.com/record/display.uri?eid=2-s2.0-85071654155&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000474785300001
https://openrepository.mephi.ru/handle/123456789/18370