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Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers

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dc.contributor.authorSavinov, S. A.
dc.contributor.authorNagaraja, K. K.
dc.contributor.authorDanilov, P. A.
dc.contributor.authorKudryashov, S. I.
dc.contributor.authorMityagin, Y. A.
dc.contributor.authorМитягин, Юрий Алексеевич
dc.date.accessioned2024-11-25T15:54:40Z
dc.date.available2024-11-25T15:54:40Z
dc.date.issued2020
dc.description.abstract© 2020 Elsevier B.V.Herein we report the studies on the GaBiAs terahertz emitters. The molecular beam epitaxy grown thin films were subjected to structural and optical characterization. Inhomogeneity of Bi concentration in the samples is confirmed by XRD, PL and EDS studies. Investigations on the generation characteristics of the fabricated bow-tie photoconductive antennas were carried out via the Fourier Transform Infrared Spectroscopy. The collected data indicate a pattern of change in the shape of the spectra with increasing bismuth concentration, namely, a sharp drop in the low-frequency part (0.1–0.2 THz) simultaneously with a noticeable increase in intensity in the range 0.3–1 THz with a pronounced maximum at frequencies of ~0.4 THz. The deterioration of the THz power to average photocurrent ratio can be explained by a general decrease in the electron mobility, caused both by a large number of structural defects and by a large local heating of the crystal.
dc.identifier.citationInvestigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers / Savinov, S.A. [et al.] // Optical Materials. - 2020. - 101. - 10.1016/j.optmat.2020.109716
dc.identifier.doi10.1016/j.optmat.2020.109716
dc.identifier.urihttps://www.doi.org/10.1016/j.optmat.2020.109716
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85078676654&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000527936300011
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/20213
dc.relation.ispartofOptical Materials
dc.titleInvestigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume101
relation.isAuthorOfPublicationef2e7428-88d7-4d9a-92e7-cde5d127f607
relation.isAuthorOfPublication.latestForDiscoveryef2e7428-88d7-4d9a-92e7-cde5d127f607
relation.isOrgUnitOfPublicationdcdb137c-0528-46a5-841b-780227a67cce
relation.isOrgUnitOfPublication.latestForDiscoverydcdb137c-0528-46a5-841b-780227a67cce
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