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Influence of irradiation by Swift Heavy Ions (SHI) on electronic magnetotransport in Sb δ-layer in silicon

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dc.contributor.authorFedotov, A. K.
dc.contributor.authorGumiennik, U. E.
dc.contributor.authorYurasov, D. V.
dc.contributor.authorFedotova, J. A.
dc.contributor.authorSkuratov, V. A.
dc.contributor.authorApel, P. Y.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-12-26T07:26:49Z
dc.date.available2024-12-26T07:26:49Z
dc.date.issued2022
dc.description.abstract© 2021In the present paper we report about the influence of Swift Heavy Ions (SHI) irradiation on the electron transport in a silicon structure containing δ-layer heavy-doped with antimony. Temperature and magnetic field dependencies of the sheet resistance RSq(T,B) in the temperature range 2 <T< 300 K and magnetic field induction (B) up to 8 T of the structure before and after the 167 MeV Xe+26 ion irradiation with 1 ⋅ 108 cm−2 – 5 ⋅ 1010 cm−2 ion fluences (D) were measured. The observed RSq(D,T) curves for δ-layer have shown the competition between formation and annealing of defects induced by SHI irradiation due to electron stopping mechanism of ion energy loosing. Besides, at temperatures below 50 K, we observed the transition from exponential dependencies of RSq(T) to a semi-logarithmic RSq∼−lg(T) ones both before and after the SHI exposure. Such behavior confirms the assumption that the low-temperature carrier transport is carried out mainly by the δ-layer. Moreover, transition from positive (PMR) to negative (NMR) relative magnetoresistance MR(B) was observed when temperature decreasing. The appropriate characteristic times for the carrier scattering process in δ-layer at temperatures below 25 K were estimated from RSq(T,B) dependencies using the theory of 2D quantum corrections to Drude conductivity due to interference of electrons moving by self-crossing routes inside of δ-layer. Fitting of RSq(T,B) curves in frameworks of this theory indicates prevailing of phase breaking of electrons‘ wave function due to their scattering on weakly-localized defect centers induced by SHI irradiation.
dc.identifier.citationInfluence of irradiation by Swift Heavy Ions (SHI) on electronic magnetotransport in Sb δ-layer in silicon / Fedotov, A.K. [et al.] // Physica E: Low-Dimensional Systems and Nanostructures. - 2022. - 138. - 10.1016/j.physe.2021.115047
dc.identifier.doi10.1016/j.physe.2021.115047
dc.identifier.urihttps://www.doi.org/10.1016/j.physe.2021.115047
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85122463552&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000777244100002
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/28637
dc.relation.ispartofPhysica E: Low-Dimensional Systems and Nanostructures
dc.titleInfluence of irradiation by Swift Heavy Ions (SHI) on electronic magnetotransport in Sb δ-layer in silicon
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume138
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