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Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study

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dc.contributor.authorBorisenko, D. P.
dc.contributor.authorGusev, A. S.
dc.contributor.authorKargin, N. I.
dc.contributor.authorDobrokhotov, P. L.
dc.contributor.authorTimofeev, A. A.
dc.contributor.authorLabunov, V. A.
dc.contributor.authorMikhalik, M. M.
dc.contributor.authorKatin, K. P.
dc.contributor.authorMaslov, M. M.
dc.contributor.authorDzhumaev, P. S.
dc.contributor.authorKomissarov, I. V.
dc.contributor.authorБорисенко, Денис Петрович
dc.contributor.authorГусев, Александр Сергеевич
dc.contributor.authorКаргин, Николай Иванович
dc.contributor.authorТимофеев, Алексей Афанасьевич
dc.contributor.authorЛабунов, Владимир
dc.contributor.authorКатин, Константин Петрович
dc.contributor.authorМаслов, Михаил Михайлович
dc.contributor.authorДжумаев, Павел Сергеевич
dc.date.accessioned2024-12-25T10:12:17Z
dc.date.available2024-12-25T10:12:17Z
dc.date.issued2022
dc.description.abstractSingle-layer (SLG)/few-layer (FLG) and multilayer graphene (MLG) (andgt;15 layers) samples were obtained using the CVD method on high-textured Cu foil catalysts. In turn, plasma-assisted molecular beam epitaxy was applied to carry out the GaN graphene-assisted growth. A thin AlN layer was used at the initial stage to promote the nucleation process. The effect of graphene defectiveness and thickness on the quality of the GaN epilayers was studied. The bilayer graphene showed the lowest strain and provided optimal conditions for the growth of GaN/AlN. Theoretical studies based on the density functional theory have shown that the energy of interaction between graphene and AlN is almost the same as between graphite sheets (194 mJ/m2). However, the presence of vacancies and other defects as well as compression-induced ripples and nitrogen doping leads to a significant change in this energy. © 2022 by the authors.
dc.identifier.citationFew-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study / Borisenko, D.P. [et al.] // Applied Sciences (Switzerland). - 2022. - 12. - № 22. - 10.3390/app122211516
dc.identifier.doi10.3390/app122211516
dc.identifier.urihttps://www.doi.org/10.3390/app122211516
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85142840458&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000887043700001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/27620
dc.relation.ispartofApplied Sciences (Switzerland)
dc.subjectbuffer layer
dc.subjectCVD graphene
dc.subjectgallium nitride
dc.subjectGaN-on-Si technology
dc.subjectGaN/AlN
dc.subjectmolecular beam epitaxy
dc.titleFew-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue22
oaire.citation.volume12
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